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PDF APT50M60L2VR Data sheet ( Hoja de datos )
| Número de pieza | APT50M60L2VR | |
| Descripción | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APT50M60L2VR (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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APT50M60L2VR
500V 77A 0.060W
POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-264
Max
• TO-264 MAX Package
• 100% Avalanche Tested
D
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
G
S
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
ALContinuous Drain Current @ TC = 25°C
ICPulsed Drain Current 1
NGate-Source Voltage Continuous
CHGate-Source Voltage Transient
TE NTotal Power Dissipation @ TC = 25°C
D IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC MALead Temperature: 0.063" from Case for 10 Sec.
A RAvalanche Current 1 (Repetitive and Non-Repetitive)
V ORepetitive Avalanche Energy 1
AD INFSingle Pulse Avalanche Energy 4
APT50M60
500
77
308
±30
±40
825
5.0
-55 to 150
300
77
50
3200
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
500
77
2
0.060
25
250
±100
4
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
Volts
Amps
Ohms
µA
nA
Volts
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet APT50M60L2VR.PDF ] | |
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