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PDF APT50M50JFLL Data sheet ( Hoja de datos )
| Número de pieza | APT50M50JFLL | |
| Descripción | Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. | |
| Fabricantes | Advanced Power Technology | |
| Logotipo |  |
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APT50M50JFLL
500V 71A 0.050W
POWER MOS 7TM FREDFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)
and Qg. Power MOS 7TM combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
SS
G D SOT-227
ISOTOP®
"UL Recognized"
D
• Lower Gate Charge, Qg • Popular SOT-227 Package
G
• FAST RECOVERY BODY DIODE
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
APT50M50JFLL
Drain-Source Voltage
LContinuous Drain Current @ TC = 25°C
ICAPulsed Drain Current 1
NGate-Source Voltage Continuous
HGate-Source Voltage Transient
EC NTotal Power Dissipation @ TC = 25°C
T IOLinear Derating Factor
E TOperating and Storage Junction Temperature Range
NC MALead Temperature: 0.063" from Case for 10 Sec.
VA RAvalanche Current 1 (Repetitive and Non-Repetitive)
D FORepetitive Avalanche Energy 1
A INSingle Pulse Avalanche Energy 4
500
71
284
±30
±40
595
4.76
-55 to 150
300
71
50
3200
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
500
71
3
0.050
250
1000
±100
5
Volts
Amps
Ohms
µA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
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