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Número de pieza | APT20GF120KR | |
Descripción | The Fast IGBT is a new generation of high voltage power IGBTs. | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APT20GF120KR (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! APT20GF120KR
1200V 32A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
TO-220
GCE
G
C
MAXIMUM RATINGS
Symbol Parameter
E
All Ratings: TC = 25°C unless otherwise specified.
APT20GF120KR
UNIT
VCES
VCGR
VEC
VGE
I C1
I C2
I CM1
I CM2
EAS
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KΩ)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 90°C
Pulsed Collector Current 1 @ TC = 25°C
Pulsed Collector Current 1 @ TC = 90°C
Single Pulse Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
1200
15
±20
32
20
64
40
22
200
-55 to 150
300
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVCES
RBVCES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA)
Collector-Emitter Reverse Breakdown Voltage (VGE = 0V, IC = 50mA)
Gate Threshold Voltage (VCE = VGE, IC = 350µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 15A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
1200
-15
4.5 5.5 6.5 Volts
2.7 3.2
3.3 3.9
0.8
mA
5.0
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035 Phone: (541) 382-8028
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1 page APT20GF120KR
PRELIMINARY
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
30 30
AA
IC 24
22
20
17V
15V
13V
11V
9V
7V
IC 24
22
20
17V
15V
13V
11V
9V
7V
18 18
16 16
14 14
12 12
10 10
88
66
44
2
0
0 1 2 3V5
VCE
2
0
0 1 2 3V5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
30
A
IC 24
22
20
18
16
14
12
10
8
6
4
2
0
0 2 4 6 8 10 V 14
VGE
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
USA
405 S.W. Columbia Street
F-33700 Merignac - France
Bend, Oregon 97702-1035
Phone: (33) 5 57 92 15 15
Phone: (541) 382-8028
FAX: (33) 5 56 47 97 61
FAX: (541) 388-0364
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APT20GF120KR.PDF ] |
Número de pieza | Descripción | Fabricantes |
APT20GF120KR | The Fast IGBT is a new generation of high voltage power IGBTs. | Advanced Power Technology |
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