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PDF APM3054NV Data sheet ( Hoja de datos )
| Número de pieza | APM3054NV | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Etc | |
| Logotipo |  |
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APM3054N
N-Channel Enhancement Mode MOSFET
Features
• 30V/15A, RDS(ON)=48mΩ(typ.) @ VGS=10V
RDS(ON)=75mΩ(typ.) @ VGS=4.5V
• Super High Dense Cell Design
• High Power and Current Handling Capability
• TO-252 and SOT-223 Package
Pin Description
123
GD S
Top View of TO-252
1 23
GDS
Top View of SOT-223
Applications
• Switching Regulators
123
• Switching Converters
GD
S
Top View of SOT-89
Ordering and Marking Information
APM3054N
APM3054N U :
APM 3054N D/V :
H andling C ode
Temp. Range
Package Code
APM3054N
XXXXX
APM3054N
XXXXX
Package Code
D : SO T-89
U : TO -252
O perating Junction Tem p. Range
C : -55 to 125° C
H andling C ode
TR : Tape & Reel
V : SO T-223
XX XXX - D ate Code
XXXXX - Date Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
30
V
±20
ID Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
15
A
30
IS Diode Continuous Forward Current
8A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
1
www.anpec.com.tw
1 page  
APM3054N
Typical Characteristics
Capacitance
750
625
500
Ciss
375
250
125
0
0
Coss
Crss
5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
30
10
TJ=150°C
TJ=25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD -Source-to-Drain Voltage (V)
Single Pulse Power
TO-252
250
200
150
100
50
0
1E-3 0.01
0.1 1 10
Time (sec)
100 1000
140
120
100
80
60
40
20
0
0.01
Single Pulse Power
SOT-223
0.1 1 10 100 1000
Time (sec)
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
5
www.anpec.com.tw
5 Page 
APM3054N
R eliab ility test p rog ram
Test item
SO LD ER A BILITY
H O LT
PCT
TST
ESD
Latch-U p
M ethod
M IL-S T D -883D -2003
M IL-S T D -883D -1005.7
JESD-22-B, A102
M IL -S T D -8 83 D -1 0 11 .9
M IL-S T D -883D -3015.7
JESD 78
Carrier Tape
Po P
E
P1
D escription
245°C , 5 SEC
1000 H rs Bias @ 125 °C
168 Hrs, 100 % RH , 121°C
-6 5°C ~ 1 5 0°C , 20 0 C yc le s
V H B M > 2K V, V M M > 200V
10m s , Itr > 1 00m A
t
D
F
W
Bo
Ao D1
Ko
J
C
A
T2
B
T1
Copyright ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
11
www.anpec.com.tw
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet APM3054NV.PDF ] | |
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