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Número de pieza | VTE1163 | |
Descripción | GaAlAs Infrared Emitting Diodes | |
Fabricantes | PerkinElmer Optoelectronics | |
Logotipo | ||
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No Preview Available ! GaAlAs Infrared Emitting Diodes
TO-46 Lensed Package — 880 nm
VTE1163
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 24 TO-46 HERMETIC (Lensed)
CHIP SIZE: .018" x .018"
This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip
suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-55°C to 125°C
200 mW
2.11 mW/°C
100 mA
1.05 mA/°C
3A
-.8%/°C
Maximum Reverse Voltage:
Maximum Reverse Current @ VR = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ IF = 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.)
5.0V
10 µA
880 nm
35 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Part Number
VTE1163
Output
Irradiance
Ee
mW/cm2
Min. Typ.
22 28
Condition
distance Diameter
mm mm
36 6.4
Radiant
Intensity
Total Power
Test
Current
Ie
mW/sr
Min.
285
PO IFT
mW mA
Typ. (Pulsed)
110 1.0
Forward Drop
VF
@ IFT
Volts
Typ. Max.
2.8 3.5
Half Power Beam
Angle
θ1/2
Typ.
±10°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
112
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Número de pieza | Descripción | Fabricantes |
VTE1163 | GaAlAs Infrared Emitting Diodes | PerkinElmer Optoelectronics |
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