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Número de pieza | UN2111 | |
Descripción | Silicon PNP epitaxial planer transistor | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UN2111 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN2111
6A
10kΩ
q UN2112
6B
22kΩ
q UN2113
6C
47kΩ
q UN2114
6D
10kΩ
q UN2115
6E
10kΩ
q UN2116
6F
4.7kΩ
q UN2117
6H
22kΩ
q UN2118
6I
0.51kΩ
q UN2119
6K
1kΩ
q UN2110
6L
47kΩ
q UN211D
6M
47kΩ
q UN211E
6N
47kΩ
q UN211F
6O
4.7kΩ
q UN211H
6P
2.2kΩ
q UN211L
6Q
4.7kΩ
q UN211M
EI
2.2kΩ
q UN211N
EW
4.7kΩ
q UN211T
EY
22kΩ
q UN211V
FC
2.2kΩ
q UN211Z
FE
4.7kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1
1 page UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN2112
–160
–140
–120
–100
– 80
– 60
– 40
IC — VCE
Ta=25˚C
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
–20 –0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
– 25˚C
Ta=75˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200
25˚C
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN2113
–160
–140
–120
–100
IC — VCE
IB= –1.0mA Ta=25˚C
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
–80 –0.4mA
–60 –0.3mA
–40 –0.2mA
–20 –0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
– 25˚C
Ta=75˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
Ta=75˚C
300
25˚C
200
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
5
5 Page UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/
Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN211D
IC — VCE
– 60
IB= –1.0mA
– 0.9mA
Ta=25˚C
– 0.8mA
– 50
– 40
– 0.3mA
–30 –0.2mA
– 0.7mA
– 0.6mA
– 0.5mA
–20 –0.4mA
– 0.1mA
–10
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
160
VCE= –10V
Ta=75˚C
120
25˚C
80 –25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
–3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
–1.5
–2.0 –2.5 –3.0 –3.5
Input voltage VIN (V)
– 4.0
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN211E
IC — VCE
– 60
IB= –1.0mA
– 0.9mA
–0.8mA –0.7mA
– 50
Ta=25˚C
– 40
– 0.3mA
–30 –0.2mA
– 0.6mA
– 0.5mA
– 0.4mA
–20 –0.1mA
–10
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE=–10V
300
200
Ta=75˚C
100 25˚C
– 25˚C
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
11
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet UN2111.PDF ] |
Número de pieza | Descripción | Fabricantes |
UN2110 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN2111 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN2112 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN2113 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
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