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Número de pieza | BU4530AL | |
Descripción | Silicon Diffused Power Transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BU4530AL (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4530AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
tf Fall time.
CONDITIONS
VBE = 0
Tmb ≤ 25 ˚C
IC = 10 A; IB = 2.22A
f = 32 kHz
f = 90 kHz
ICsat = 9.0 A; f = 32 kHz
ICsat = 8.0 A; f = 90 kHz
TYP.
-
-
-
-
-
-
9
8
0.20
0.12
MAX.
1500
800
16
40
125
3.0
-
-
0.26
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
PINNING - SOT430
PIN DESCRIPTION
1 base
2 collector
3 emitter
heat collector
sink
PIN CONFIGURATION
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Tmb ≤ 25 ˚C
MIN.
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
16
40
10
15
125
150
150
UNIT
V
V
A
A
A
A
W
˚C
˚C
April 1999 1 Rev 1.100
1 page Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4530AL
MECHANICAL DATA
Dimensions in mm
Net Mass: 9 g
20.5 max
3.1
3.53
4.06
25.5
26.5
22.53
22.63
2.99
2.09
3.13
3.23
2.39
19.5 18.16
min
5.3 max
3.0
6.17 3.0
4.06
8.53
1.92
seating
plane
2.45
3.5 max
0.8
1.35
5.45 5.45
0.4 M
1.0 max
3.0 max
Fig.14. SOT430; pin 2 connected to mounting base.
April 1999 5 Rev 1.100
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BU4530AL.PDF ] |
Número de pieza | Descripción | Fabricantes |
BU4530AL | Silicon Diffused Power Transistor | NXP Semiconductors |
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