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PDF BU4522AF Data sheet ( Hoja de datos )
| Número de pieza | BU4522AF | |
| Descripción | Silicon Diffused Power Transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4522AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of colour TV receivers and PC monitors.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current (Fig 17)
tf Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 7 A; IB = 1.75 A
f = 16 kHz
f = 64 kHz
ICsat = 7 A; f = 16 kHz
ICsat = 6 A; f = 64 kHz
TYP.
-
-
-
-
-
-
7
6
285
170
MAX.
1500
800
10
25
45
3.0
-
-
400
230
UNIT
V
V
A
A
W
V
A
A
ns
ns
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
10
25
6
9
6
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1 Turn-off current.
December 1997
1
Rev 1.000
1 page  
Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4522AF
120 PD%
110
Normalised Power Derating
with heatsink compound
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Ths / C
Fig.13. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C
Zth / (K/W)
10
BU4522AF
0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
PD tp
D
=
tp
T
0.001
1.0E-07
0
1.0E-05
1.0E-03
t/s
T
1.0E-01
t
1.0E-01
Fig.14. Transient thermal impedance.
VCC
IC / A
30
BU2522AF
20
10
0
0 500 1000 1500
VCE / V
Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax
Ic(sat) (A)
10
9
8
7
6
5
4
3
2
1
0 0 10
20 30 40 50 60 70
Horizontal frequency (kHz)
80 90 100
Fig.17. ICsat during normal running vs. frequency of
operation for optimum performance
IBend
-VBB
LC
LB
T.U.T.
Fig.15. Test Circuit RBSOA.
VCL
CFB
December 1997
5
Rev 1.000
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BU4522AF.PDF ] | |
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