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Número de pieza | BU4506 | |
Descripción | Silicon Diffused Power Transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BU4506 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4506AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
VBE = 0 V
Ths ≤ 25 ˚C
IC = 3 A; IB = 0.75 A
f = 16 kHz
ICsat = 3.0 A;f = 16 kHz
TYP.
-
-
-
-
-
-
3.0
300
MAX.
1500
800
5
8
45
3.0
-
450
UNIT
V
V
A
A
W
V
A
ns
PINNING - SOT199
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
1 23
SYMBOL
c
b
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
Ths ≤ 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
5
8
3
5
4
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
TYP.
-
32
MAX.
2.8
-
UNIT
K/W
K/W
1 Turn-off current.
July 1999
1
Rev 1.000
1 page Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU4506AF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
0.7
21.5
max
15.3 max
3.1
7.3 3.3
5.2 max
3.2
o
6.2 45
5.8
seating
plane
3.5
15.7
min
1
2.1 max
23
1.2
1.0
5.45 5.45
3.5 max
not tinned
0.4 M
0.7 max
2.0
Fig.13. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1999
5 Rev 1.000
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BU4506.PDF ] |
Número de pieza | Descripción | Fabricantes |
BU4506 | Silicon Diffused Power Transistor | NXP Semiconductors |
BU4506 | Silicon Diffused Power Transistor | NXP Semiconductors |
BU4506AF | Silicon Diffused Power Transistor | NXP Semiconductors |
BU4506AX | Silicon Diffused Power Transistor | NXP Semiconductors |
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