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PDF BTS555E3146 Data sheet ( Hoja de datos )
| Número de pieza | BTS555E3146 | |
| Descripción | Smart Highside High Current Power Switch | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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PROFET® Data Sheet BTS555
Smart Highside High Current Power Switch Reversave
Reversave
Product Summary
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection
• Current limitation
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Vbb(AZ)
VON(CL)
Vbb(on)
RON1)
62
44
5.0 ... 34
V
V
V
2.5 mΩ
• Short circuit protection
• Overtemperature protection
• Overvoltage protection (including load dump)
• Clamp of negative voltage at output
Load current (ISO)
IL(ISO)
Short circuit current limitation IL(SCp)
Current sense ratio
IL : IIS
165
520
30 000
A
A
• Fast deenergizing of inductive loads 2)
• Low ohmic inverse current operation
TO-218AB/5
TO-218AB-5-1
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection3)
• Electrostatic discharge (ESD) protection
5
Application
• Power switch with current sense diagnostic
1
Straight leads
Staggered leads
feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
2 IN
ESD
I IN
Logic
VIN
V IS
Logic GND
I IS
IS
4
RIS
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
3 & Tab
+ Vbb
OUT 1, 5
IL
Load
Temperature
sensor
PROFET
Load GND
1 ) Due to the different lead frame geometry Ron @25°C is 0.3 mΩ higher in staggered than in straight version,
and accordingly for other temperatures.
2 ) With additional external diode.
3) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
1 of 16
2003-Oct-01
1 page  
Data Sheet BTS555
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Symbol
Protection Functions16)
Short circuit current limit (Tab to pins 1,5)17)
VON = 12 V, time until shutdown max. 300 µs Tc =-40°C:
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp 18)
(inductive load switch off)
IL= 40 mA:
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
IL= 40 mA
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
Thermal overload trip temperature
Thermal hysteresis
IL(SCp)
td(SC)
-VOUT(CL)
VON(CL)
VON(SC)
Tjt
∆Tjt
Reverse Battery
Reverse battery voltage 19)
On-state resistance (Pins 1,5 to pin 3)
Tj = 25°C:
Vbb =-12V, VIN=0, IL=- 30 A, RIS =1 kΩ Tj = 150°C:
Integrated resistor in Vbb line
Tj = 25°C:
Tj = 150°C:
-Vbb
RON(rev) 1)
Rbb
Values
Unit
min typ max
200 320 550
200 400 620
300 480 650
A
80 -- 300 µs
14 17 20 V
40 44 47 V
-- 6
150 --
-- 10
-- V
-- °C
-- K
-- -- 16 V
-- 2.3 3.0 mΩ
3.9 4.7
90 110 135
105 125 150
Ω
16) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
17 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by
permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.
18) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
19) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
Infineon Technologies AG
5
2003-Oct-01
5 Page 
Options Overview
Type
BTS
Overtemperature protection with hysteresis
Tj >150 °C, latch function25)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
with overtemperature shutdown
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
Overvoltage shutdown
Output negative voltage transient limit
to Vbb - VON(CL)
to VOUT = -15 V typ
6510 550P 555
650P
XXX
X
XX
X
XX
---
XXX
X26) X26) X26)
Data Sheet BTS555
25) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
26) Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
Infineon Technologies AG
11
2003-Oct-01
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet BTS555E3146.PDF ] | |
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