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PDF BTS5215L Data sheet ( Hoja de datos )
| Número de pieza | BTS5215L | |
| Descripción | Smart High-Side Power Switch Two Channels: 2 x 90m Status Feedback | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS5215L (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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BTS 5215L
Smart High-Side Power Switch
Two Channels: 2 x 90mΩ
Status Feedback
Product Summary
Package
Operating Voltage
On-state Resistance
Nominal load current
Current limitation
Vbb
Active channels one
RON
IL(NOM)
IL(SCr)
90mΩ
3.7A
12A
5.5...40V
two parallel
45mΩ
7.4A
12A
P-DSO-12
General Description
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
• Providing embedded protective functions
Applications
• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
• All types of resistive, inductive and capacitve loads
• Most suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
• Very low standby current
• CMOS compatible input
• Improved electromagnetic compatibility (EMC)
• Fast demagnetization of inductive loads
• Stable behaviour at undervoltage
• Wide operating voltage range
• Logic ground independent from load ground
Protection Functions
• Short circuit protection
• Overload protection
• Current limitation
• Thermal shutdown
• Overvoltage protection (including load dump) with external
resistor
• Reverse battery protection with external resistor
• Loss of ground and loss of Vbb protection
• Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN1
ST1
IN2
ST2
Logic
Channel 1
Channel 2
Load 1
Load 2
Diagnostic Function
• Diagnostic feedback with open drain output
• Open load detection in OFF-state
• Feedback of thermal shutdown in ON-state
GND
Infineon Technologies AG
1
2003-Oct-01
1 page  
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
junction - Case6)
junction – ambient6)
@ 6 cm2 cooling area
each channel:
one channel active:
all channels active:
RthjC
Rthja
Electrical Characteristics
Parameter and Conditions, each of the four channels
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Symbol
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 2 A
each channel, Tj = 25°C:
Tj = 150°C:
two parallel channels, Tj = 25°C:
see diagram, page 11
RON
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
Device on PCB6), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled up7); IL(GNDhigh)
Vbb = 32 V, VIN = 0,
see diagram page 9
Turn-on time8)
IN to 90% VOUT: ton
Turn-off time
IN to 10% VOUT: toff
RL = 12 Ω
Slew rate on 8)
Slew rate off 8)
10 to 30% VOUT, RL = 12 Ω: dV/dton
70 to 40% VOUT, RL = 12 Ω: -dV/dtoff
BTS 5215L
Values
Unit
min typ max
-- --
-- --
-- 45
-- 40
5 K/W
--
--
--
Values
Unit
min typ max
-- 70 90 mΩ
-- 140 180
-- 35 45
3.7 4.7
7.4 9.5
-- A
-- -- 2 mA
-- 100 250 µs
-- 100 270
0.2 -- 1.0 V/µs
0.2 -- 1.1 V/µs
6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7) not subject to production test, specified by design
8) See timing diagram on page 12.
Infineon Technologies AG
5
2003-Oct-01
5 Page 
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [mOhm]
160 Tj = 150°C
120
80 25°C
-40°C
40
0
5 7 9 11
30 40
Vbb [V]
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low
Ibb(off) [µA]
45
40
35
30
25
20
15
10
5
0
-50 0 50 100
Infineon Technologies AG
150 200
Tj [°C]
11
BTS 5215L
2003-Oct-01
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet BTS5215L.PDF ] | |
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