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Número de pieza | BTS426L1 | |
Descripción | Smart Highside Power Switch (Overload protection Current limitation Short circuit protection) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BTS426L1 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! PROFET® BTS 426 L1
Smart Highside Power Switch
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
43 V
5.0 ... 34 V
60 mΩ
7.0 A
16 A
TO-220AB/5
5
Standard
5
1
Straight leads
1
SMD
5
Application
• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
Short to Vbb
detection
OUT
Temperature
sensor
5
RO
Load
GND
1
Signal GND
GND
PROFET®
Load GND
1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
12.96
1 page Parameter and Conditions
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Symbol
BTS 426 L1
Values
Unit
min typ max
Input and Status Feedback11)
Input resistance
Tj=-40..150°C, see circuit page 6
RI
Input turn-on threshold voltage Tj =-40..+150°C: VIN(T+)
Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-)
Input threshold hysteresis
∆ VIN(T)
Off state input current (pin 2), VIN = 0.4 V,
Tj =-40..+150°C
IIN(off)
On state input current (pin 2), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
Delay time for status with open load after switch
off
(see timing diagrams, page 11), Tj =-40..+150°C
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
td(ST OL4)
td(ST)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)
ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low)
Tj = +150°C, IST = +1.6 mA:
2.5 3.5
6 kΩ
1.7 -- 3.5 V
1.5 -- -- V
-- 0.5
-- V
1 -- 50 µA
20 50 90 µA
100 520 1000 µs
-- 250 600 µs
5.4 6.1
--
-- -- 0.4
-- -- 0.6
V
11) If a ground resistor RGND is used, add the voltage drop across this resistor.
Semiconductor Group
5
5 Page Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
ST
V
OUT
BTS 426 L1
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
td(ST OL1)
ST
t d(ST OL2)
VOUT
T
J
t
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
t
ST d(ST)
td(ST OL4)
I normal
L
open
normal
t
td(ST OL1) = 20 µs typ., td(ST OL2) = 10 µs typ
Figure 5c: Open load: detection in ON- and OFF-state
(with REXT), turn on/off to open load
IN
ST
t
d(ST)
V
OUT
V
OUT
I
L
open
t
The status delay time td(ST OL4) allows to ditinguish between
the failure modes "open load" and "overtemperature".
I
L
open
t
Semiconductor Group
11
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet BTS426L1.PDF ] |
Número de pieza | Descripción | Fabricantes |
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