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Número de pieza | PTF10160 | |
Descripción | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor | |
Fabricantes | Ericsson | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTF10160 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! PTF 10160
85 Watts, 860–960 MHz
GOLDMOS ® Field Effect Transistor
Description
The PTF 10160 is an internally matched 85–watt GOLDMOS FET
intended for cellular, GSM, D-AMPS and EDGE applications. It oper-
ates with 53% efficiency and 16 dB typical gain. Full gold metalliza-
tion ensures excellent device lifetime and reliability.
• INTERNALLY MATCHED
• Performance at 960 MHz, 26 Volts
- Output Power = 85 Watts
- Power Gain = 16 dB Typ
- Efficiency = 53% Typ
• Full Gold Metallization
• Silicon Nitride Passivated
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Output Power& Efficiency vs. Input Power
120 70
100
80
60
40
20
0
0
Efficiency
60
50
VDD = 26 V
IDQ = 700 mA
f = 960 MHz
40
30
20
Output Power
1 23 4
Input Power (Watts)
10
0
5
101601234560055A
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz)
Power Output at 1 dB Compression
(VDD = 26 V, IDQ = 700 mA, f = 960 MHz)
Drain Efficiency
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz)
Load Mismatch Tolerance
(VDD = 26 V, POUT = 85 W, IDQ = 700 mA, f = 960 MHz
—all phase angles at frequency of test)
All published data at TCASE = 25°C unless otherwise indicated.
Symbol Min
Gpe
P-1dB
h
Y
15
85
50
—
Typ
16
90
53
—
Max Units
— dB
— Watts
—%
5:1 —
e
1
1 page e
Impedance Data
VDD = 26 V, POUT = 85 W, IDQ = 700 mA
Z Source
D
Z Load
Z0 = 50 W
Frequency
MHz
860
880
900
920
940
960
Z Source W
R jX
2.1 -1.5
2.6 -1.6
3 -1.7
4.1 -1.7
6.3 -1.5
7.1 1.5
G
S
Z Load W
R jX
2.6 1.1
2.6 1.3
2.6 1.5
2.4 1.5
2.3 1.65
2.2 1.8
Test Circuit
PTF 10160
Test Circuit Schematic for f = 921 to 960 MHz
DUT
l1, l9
l2
l3
l4
l5
l6
l7
l8
l1, l9
PTF 10160
0.037 l
0.120 l
0.080 l
0.187 l
0.204 l
0.250 l
0.031 l
0.157 l
0.037 l
LDMOS Transistor
Microstrip 50 W
Microstrip 50 W
Microstrip 50 W
Microstrip 9.29 W
Microstrip 6.98 W
Microstrip 77.9 W
Microstrip 50 W
Microstrip 50 W
Microstrip 50 W
C1, C3, C4, C8 100 B
Capacitor, 36 pF
C2
100 B
Capacitor, 2.7 pF
C5 Digi-Key P4525-ND Capacitor, 0.1 µF, 50 V
C6 Digi-Key P5182-ND Capacitor, 100 µF, 50 V
C7 ATC 100 B Capacitor, 3.3 pF
J1, J2
SMA Panel Mount Female Connector
R1, R2, R3
220 W
Resistor, Digi-Key 1K QBK
Circuit Board
eA.0l3lie1d" STihgincaknl,eGs2s,00,r
=
2
4.0,
oz. copper
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet PTF10160.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTF10160 | 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor | Ericsson |
PTF10161 | 165 Watts/ 869-894 MHz GOLDMOS Field Effect Transistor | Ericsson |
PTF10162 | 18 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor | Ericsson |
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