|
|
PDF PTF10107 Data sheet ( Hoja de datos )
| Número de pieza | PTF10107 | |
| Descripción | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PTF10107 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
PTF 10107
5 Watts, 2.0 GHz
GOLDMOS ® Field Effect Transistor
Description
The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal
applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
• Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
• Full Gold Metallization
• Silicon Nitride Passivated
• Back Side Common Source
• Excellent Thermal Stability
• 100% Lot Traceability
Typical Output Power & Efficiency
vs. Input Power
8 100
7 Output Pow er
80
6
Ef f iciency
5 60
4
3
VDD = 26 V
40
2
IDQ = 70 mA
20
1 f = 2.0 GHz
00
0.0 0.1 0.2 0.3 0.4 0.5
Input Power (Watts)
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 26 V, POUT = 1 W, IDQ = 70 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(VDD = 26 V, IDQ = 70 mA, f = 1.99 GHz)
Drain Efficiency
(VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.99 GHz
—all phase angles at frequency of test)
All published data at TCASE = 25°C unless otherwise indicated.
10107A-1234569845
Package 20244
Symbol Min Typ Max Units
Gps
P-1dB
11
5
—
6.5
— dB
— Watts
hD 40 — — %
Y — — 10:1 —
e
1
1 page  
e
Test Circuit
PTF 10107
Block Diagram for f = 1.96 GHz
DUT
l1
l2
l3
l4
l5
l6
PTF 10107
0.303 l 1.99 GHz
0.146 l 1.99 GHz
0.076 l 1.99 GHz
0.072 l 1.99 GHz
0.060 l 1.99 GHz
0.352 l 1.99 GHz
LDMOS RF FET
Microstrip 50 W
Microstrip 11.6 W
Microstrip 17.7 W
Microstrip 13.5 W
Microstrip 17.7 W
Microstrip 50 W
C1
C2, C3, C6, C9
C4, C10
C5
C7
C8
J1, J2
L1
L2
R1, R2
Circuit Board
Capacitor, 0.1 µF
Digi-Key P4525-ND
Capacitor, 33 pF
ATC 100 B
Capacitor, 0.5 pF
ATC 100 B
Capacitor, 1.1 pF
ATC 100 B
Capacitor, 0.1 µF 50 V Digi-Key
Capacitor, 100 µF, 50 V Digi-Key P5182-ND
Connector, SMA, Female, Panel Mount
Chip Inductor, 2.7 µH Digi-Key LL2012-F2N7K
3 Turns, 20 AWG, .120 I. D.
N/A
Resistor, 220 ohm, 1/4W Digi-Key QBK-ND
e0.031" Thick, r = 4.0, 2 0z copper, G200 AlliedSignal
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet PTF10107.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTF10100 | 165 Watts/ 860-900 MHz LDMOS Field Effect Transistor | Ericsson |
| PTF10107 | 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor | Ericsson |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |