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Número de pieza | PTF10048 | |
Descripción | 30 Watts/ 2.1-2.2 GHz/ W-CDMA GOLDMOS Field Effect Transistor | |
Fabricantes | Ericsson | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PTF10048 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! PTF 10048
30 Watts, 2.1–2.2 GHz, W-CDMA
GOLDMOS® Field Effect Transistor
Description
The PTF 10048 is an internally matched 30–watt GOLDMOS FET
intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at
40% efficiency with 10.5 dB typical gain. Nitride surface passivation
and full gold metallization ensure excellent device lifetime and
reliability.
INTERNALLY MATCHED
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 30 Watts Min
- Gain = 10.5 dB Typ at 30 Watts
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
40 45
Ef f ic ienc y
30 35
20
10
0
0
Output Pow er
VDD = 28 V
IDQ = 425 mA
f = 2170 MHz
25
15
123
Input Power (Watts)
5
4
10048A-1234569940
Package 20237
RF Specifications (100% Tested)
Characteristic
Symbol
Gain
(VDD = 28 V, POUT = 10 W, IDQ = 425 mA, f = 2.11 & 2.17 GHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 425 mA, f = 2.17 GHz)
Drain Efficiency
(VDD = 28 V, POUT = 30 W, IDQ = 425 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 30 W, IDQ = 425 mA, f = 2.17 GHz
—all phase angles at frequency of test)
Gps
P-1dB
h
Y
All published data at TCASE = 25°C unless otherwise indicated.
Min
10
30
30
—
Typ
11
36
40
—
Max Units
— dB
— Watts
—%
10:1
—
e
1
1 page e
Test Circuit
PTF 10048
Test Circuit Schematic for f = 2.15 GHz
DUT
l1
l2, l5
l3
l4
l6
l7
C1, C10
C2, C5, C6, C9
C3, C8
C4
C7
PTF 10048 LDMOS Power Transistor
0.052 l 2.15 GHz Microstrip 11.14 W
0.255 l 2.15 GHz Microstrip 50 W
0.075 l 2.15 GHz Microstrip 50 W
0.143 l 2.15 GHz Microstrip 10.2 W
0.250 l 2.15 GHz Microstrip 75 W
0.125 l 2.15 GHz Microstrip 80 W
10 µF
Tantulum Capacitor
10 pF
Chip Capacitor, ATC 100 B
0.1 µF, 50 V Digi-Key P4525-ND
0.2 pF, 50 V Chip Capacitor, ATC 100 A
0.9 pF
Chip Capacitor, ATC 100 A
J1, J2
L1
L2
R1, R2
R3
SMA Female Connectors, Panel Mount
4.7 nH
6 mm SMT Ferrite Bead
220 W Chip Resistor, P220ECI
1.0 W Chip Resistor, P1.0ECT
eCircuit Board 0.031" thick, r = 4.0, G200, AlliedSignal,
2 oz. copper
Parts Layout (not to scale)
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet PTF10048.PDF ] |
Número de pieza | Descripción | Fabricantes |
PTF10043 | 12 Watts/ 1.9-2.0 GHz GOLDMOS Field Effect Transistor | Ericsson |
PTF10045 | 30 Watts/ 1.60-1.65 GHz GOLDMOS Field Effect Transistor | Ericsson |
PTF10048 | 30 Watts/ 2.1-2.2 GHz/ W-CDMA GOLDMOS Field Effect Transistor | Ericsson |
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