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PDF PTB20167 Data sheet ( Hoja de datos )
| Número de pieza | PTB20167 | |
| Descripción | 60 Watts/ 850-960 MHz RF Power Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTB 20167
60 Watts, 850–960 MHz
RF Power Transistor
Description
The 20167 is an NPN, common base RF power transistor intended
for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum
output power, it is specifically designed for class C power amplifier
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
24 Volt, 905 MHz Common Base Characteristics
- Output Power = 60 W
- Power Gain = 7.0 dB Min
- Efficiency = 60% Min
Double Input/Output Matched for Wideband
Performance
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
65
60
55
50
45
40 VCC = 24 V
35 f = 905 MHz
30
6
7 8 9 10
Input Power (Watts)
11
12
20167LOT CODE
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCEO
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
30
55
4.0
10
175
1
–40 to +150
1
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PTB20167.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| PTB20167 | 60 Watts/ 850-960 MHz RF Power Transistor | Ericsson |
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