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PDF PTB20147 Data sheet ( Hoja de datos )
| Número de pieza | PTB20147 | |
| Descripción | 2.5 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTB 20147
2.5 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20147 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
6
5 VCC = 26 V
ICQ = 40 mA
4 f = 2.0 GHz
3
2
1
0
0 0.1 0.2 0.3 0.4 0.5
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
9/28/98
1
2.5 Watts, 1.8–2.0 GHz
Class AB Characteristics
35% Collector Efficiency at 4 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
20147LOT CODE
Package 20208
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
1.0
10
0.057
–40 to +150
17.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PTB20147.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTB20141 | 18 Watts/ 1.465-1.513 GHz Cellular Radio RF Power Transistor | Ericsson |
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| PTB20146 | 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor | Ericsson |
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