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PDF PTB20141 Data sheet ( Hoja de datos )
| Número de pieza | PTB20141 | |
| Descripción | 18 Watts/ 1.465-1.513 GHz Cellular Radio RF Power Transistor | |
| Fabricantes | Ericsson | |
| Logotipo |  |
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PTB 20141
18 Watts, 1.465–1.513 GHz
Cellular Radio RF Power Transistor
Description
The 20141 is a class AB, NPN, common emitter RF power transistor
intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
30
VCC = 23 V
25
ICQ = 50 mA
20 f = 1.501 GHz
15
10
5
0
0 12 34
Input Power (Watts)
5
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
18 Watts, 1.465–1.513 GHz
Class AB Characteristics
45% Min Collector Efficiency at 9 Watts
Gold Metallization
Silicon Nitride Passivated
20141LOT CODE
Package 20201
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
2.0
51.5
0.29
–40 to +150
3.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet PTB20141.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTB20141 | 18 Watts/ 1.465-1.513 GHz Cellular Radio RF Power Transistor | Ericsson |
| PTB20144 | 6 Watts/ 915-960 MHz Cellular Radio RF Power Transistor | Ericsson |
| PTB20145 | 9 Watts/ 915-960 MHz Cellular Radio RF Power Transistor | Ericsson |
| PTB20146 | 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor | Ericsson |
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