(PDF) PTB20134 Datasheet - 30 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

Número de pieza	PTB20134
Descripción	30 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
Fabricantes	Ericsson
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No Preview Available ! e PTB 20134 30 Watts, 860–900 MHz Cellular Radio RF Power Transistor Description The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Typical Output Power vs. Input Power 50 VCC = 25 V 40 ICQ = 100 mA f = 900 MHz 30 20 10 0 0 1 23 4 Input Power (Watts) 5 30 Watts, 860–900 MHz Class AB Characteristics 50% Min Collector Efficiency at 30 Watts Gold Metallization Silicon Nitride Passivated 20134LOT CODE Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) Symbol VCER VCBO VEBO IC PD TSTG RθJC Value 40 50 4.0 8.0 80 0.45 –40 to +150 2.2 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 9/28/98 1 1 page

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PDF PTB20134 Data sheet ( Hoja de datos )