(PDF) PTB20080 Datasheet - 25 Watts/ 1.6-1.7 GHz RF Power Transistor

Número de pieza	PTB20080
Descripción	25 Watts/ 1.6-1.7 GHz RF Power Transistor
Fabricantes	Ericsson
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No Preview Available ! e PTB 20080 25 Watts, 1.6–1.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internally- matched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. Typical Output Power & Efficiency vs. Input Power 40 80 25 Watts, 1.6–1.7 GHz Class AB Characteristics 40% Collector Efficiency at 25 Watts Gold Metallization Silicon Nitride Passivated 30 60 20 40 VCC = 26 V 10 ICQ = 125 mA 20 f = 1.65 GHz 00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Input Power (Watts) Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25° C Above 25° C derate by Storage Temperature Range Thermal Resistance (Tflange = 70°C) 20EX0XX 80 Package 20209 Symbol VCER VCBO VEBO IC PD TSTG RθJC Value 50 50 4.0 3.4 123 0.7 150 1.43 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C/W 9/28/98 1 1 page

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PDF PTB20080 Data sheet ( Hoja de datos )