(PDF) PT9701 Datasheet - NPN SILICON RF POWER TRANSISTOR

Número de pieza	PT9701
Descripción	NPN SILICON RF POWER TRANSISTOR
Fabricantes	Advanced Semiconductor
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No Preview Available ! PT9701 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC 1.25 A VCES 45 V PDISS 14 W @ TC = 25 °C TJ -55 °C to +200 °C TSTG -55 °C to +200 °C θJC 12 °C/W PACKAGE STYLE .280 4L STUD 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCEO IC = 20 mA BVCES IC = 10 mA BVEBO IE = 1.0 mA hFE VCE = 5.0 V IC = 200 mA Cob VCB = 28 V f = 1.0 MHz PG ηC VCE = 28 V Pout = 5.0 W f = 400 MHz MINIMUM TYPICAL MAXIMUM 25 45 3.5 15 UNITS V V V --- 7.0 pF 10 12 50 55 dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 1 page

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PDF PT9701 Data sheet ( Hoja de datos )