PDF RHR1K160D Data sheet ( Hoja de datos )

Número de pieza	RHR1K160D
Descripción	1A/ 600V Hyperfast Dual Diode
Fabricantes	Intersil Corporation
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No Preview Available ! Data Sheet RHR1K160D January 2000 File Number 4788 [ /Title (RHR1 K160D ) /Sub- ject (1A, 600V Hyper- fast Dual Diode) /Autho r () /Key- words (Inter- sil Corpo- ration, semi- con- ductor, Ava- lanche Energy Rated, Switch ing Power Sup- plies, Power Switch ing Cir- cuits, Rectiﬁ- ers, 1A, 600V Hyperfast Dual Diode The RHR1K160D is a hyperfast dual diode with soft recovery characteristics (trr < 25ns). It has about half the recovery time of ultrafast diodes and is silicon nitride passivated ion- implanted epitaxial planar construction. This device is intended for use as freewheeling/clamping diodes and rectiﬁers in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA49185. Ordering Information PART NUMBER PACKAGE BRAND RHR1K160D MS-012AA RHR1K160D NOTE: When ordering, use the entire part number. For ordering in tape and reel, add the sufﬁx 96 to the part number, i.e., RHR1K160D96. Packaging JEDEC MS-012AA BRANDING DASH 1 23 4 5 Features • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <25ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .150oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V • Thermal Impedance SPICE® Model • Thermal Impedance SABER© Model • Avalanche Energy Rated • Planar Construction • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Applications • Switching Power Supplies • Power Switching Circuits • General Purpose Symbol NC (1) ANODE 1 (2) CATHODE 1 (8) CATHODE 1 (7) ANODE 2 (3) NC (4) CATHODE 2 (6) CATHODE 2 (5) Absolute Maximum Ratings (Per Leg) TA = 25oC, Unless Otherwise Speciﬁed Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectiﬁed Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) TA = 65oC Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM Square Wave, 20kHz Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM Halfwave, 1 phase, 60Hz Maximum Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 11 and 12) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG,TJ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg RHR1K160D 600 600 600 1 2 10 2.5 5 -55 to 150 300 260 UNITS V V V A A A W mJ oC oC oC 1 1-888-INTERSIL or 321-724-7143 \| Copyright © Intersil Corporation 2000 SABER is a Copyright of Analogy, Inc. 1 page RHR1K160D Thermal Resistance vs Mounting Pad Area The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application’s ambient temperature, TA (oC), and thermal resistance RθJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part. PDM = -(--T----J-Z--M--θ----J–---A-T----A----) (EQ. 1) In using surface mount devices such as the SOP-8 package, the environment in which it is applied will have a signiﬁcant inﬂuence on the part’s current and maximum power dissipation ratings. Precise determination of PDM is complex and inﬂuenced by many factors: 1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. The number of copper layers and the thickness of the board. 3. The use of external heat sinks. 4. The use of thermal vias. 5. Air ﬂow and board orientation. 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. Intersil provides thermal information to assist the designer’s preliminary application evaluation. Figure 13 defines the RθJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 2 oz. copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Intersil device SPICE thermal model or manually utilizing the normalized maximum transient thermal impedance curve. 350 RθJA = 110.2 - 25.24 x ln (AREA) 300 239oC/W - 0.006in2 250 201oC/W - 0.027in2 200 150 100 Rθβ = 43.81 - 22.66 x ln (AREA) 50 0.001 0.01 AREA, TOP COPPER AREA (in2) 0.1 FIGURE 13. THERMAL RESISTANCE vs MOUNTING PAD AREA Displayed on the curve are RθJA values listed in the Electrical Speciﬁcations table. These points were chosen to depict the compromise between the copper board area, the thermal resistance and ultimately the power dissipation, PDM. Thermal resistances corresponding to other component side copper areas can be obtained from Figure 13 or by calculation using Equation 2. The area, in square inches is the top copper board area, the thermal resistance and ultimately the power dissipation, PDM. RθJA = 110.18 – 25.24 × ln (Area) (EQ. 2) While Equation 2 describes the thermal resistance of a single die, the dual die SOP-8 package introduces an additional thermal component, thermal coupling resistance, Rθβ. Equation 3 describes Rθβ as a function of the top copper mounting pad area. Rθβ = 43.81 – 22.66 × ln (Area) (EQ. 3) The thermal coupling resistance vs. copper area is also graphically depicted in Figure 13. It is important to note the thermal resistance (RθJA) and thermal coupling resistance (Rθβ) are equivalent for both die. For example at 0.1 square inches of copper: RθJA1 = RθJA2 = 168oC/W Rθβ1 = Rθβ2 = 96oC/W TJ1 and TJ2 deﬁne the junction temperature of the respective die. Similarly, P1 and P2 deﬁne the power dissipated in each die. The steady state junction temperature can be calculated using Equation 4 for die 1 and Equation 5 for die 2. Example: Use Equation 4 to calculate TJ1 and Equation 5 to calculate TJ2 with the following conditions. Die 2 is dissipating 0.5W; die 1 is dissipating 0W; the ambient temperature is 60oC; the package is mounted to a top copper area of 0.1 square inches per die. 5 5 Page

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