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Número de pieza | RFP25N05L | |
Descripción | 25A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFP25N05L (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Data Sheet
RFP25N05L
July 1999 File Number 2270.3
25A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP25N05L is an N-Channel logic level power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. The RFP25N05L was
designed for use with logic level (5V) driving sources in
applications such as programmable controllers, automotive
switching, switching regulators, switching converters, motor
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP25N05L
TO-220AB
RFP25N05L
NOTE: When ordering, include the entire part number.
Features
• 25A, 50V
• rDS(ON) = 0.047Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
6-243
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page Test Circuits and Waveforms
RFP25N05L
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01Ω
FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 14. UNCLAMPED ENERGY WAVEFORMS
VDS
VGS
VGS
RGS
RL
DUT
+
VDD
-
FIGURE 15. SWITCHING TIME TEST CIRCUIT
CURRENT
REGULATOR
12V
BATTERY
0.2µF 50kΩ
0.3µF
VDS
(ISOLATED
SUPPLY)
SAME TYPE
AS DUT
D
G DUT
Ig(REF)
0
S
VDS
IG CURRENT
SAMPLING
ID CURRENT
SAMPLING
RESISTOR
RESISTOR
FIGURE 17. GATE CHARGE TEST CIRCUIT
6-247
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 16. RESISTIVE SWITCHING WAVEFORMS
VDD
Qgs
0
Qg(TOT)
Qgd
VGS
VDS
Ig(REF)
0
FIGURE 18. GATE CHARGE WAVEFORMS
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RFP25N05L.PDF ] |
Número de pieza | Descripción | Fabricantes |
RFP25N05 | 25A/ 50V/ 0.047 Ohm/ N-Channel Power MOSFET | Intersil Corporation |
RFP25N05 | Trans MOSFET N-CH 50V 25A 3-Pin(3+Tab) TO-220AB | New Jersey Semiconductor |
RFP25N05L | 25A/ 50V/ 0.047 Ohm/ Logic Level/ N-Channel Power MOSFET | Intersil Corporation |
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