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Número de pieza SLD432S
Descripción Ultrahigh Power Infrared Array Laser Diode Achieves 40 W Optical Power Output
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Ultrahigh Power Infrared Array Laser Diode
Achieves 40 W Optical Power Output
SLD432S
Did you know that ultrahigh power infrared laser diodes are used in
welding equipment and the equipment used to trim photomasks?
These ultrahigh power infrared laser diodes now have the high reli-
ability to respond to the needs of this evolving industrial equipment.
Sony continues to push the limits of increased power and improved
reliability in the laser diodes that support these developments.
Sony has now developed the SLD432S 40 W optical power output
array laser diode that features both high power and the ability to be
used in a wide range of applications.
s Emission wavelength: 808 ±3 nm
s Rated optical power output: 40 W, CW
operation
s High reliability
s Low operating current
Ultrahigh Power
Laser Diode Array
The development of ultrahigh power
laser diodes began with the single stripe
type device. The one-dimensional linear
array laser was developed to respond to
needs for even higher power levels from
ultrahigh power infrared laser diodes. This
array laser diode concept is a technology
that can be applied when the reliability and
other characteristics of the single-stripe
ultrahigh power laser diode technology
have achieved a high level. The technol-
ogy that allowed the SLD344YT and other
single-stripe type laser diode products to
achieve the 6 W output level became the
technological foundation for the array la-
ser diode.
VOICE
The development of infrared array
laser diodes, using the AlGaAs ma-
terial familiar from the laser diodes
used in CD players and similar
products has finally reached the
extremely high level of 40 W. We
plan to continue to increase the
power levels and the functionality
of laser diodes using this material,
which is well suited to volume
production. Sony is the company
to watch for leading edge laser
diodes.
High-Reliability Ultrahigh
Power Laser Diode
The SLD432S of this release has a struc-
ture in which 33 emitters with 100 µm
width are arranged in a one-dimensional
linear array as shown in figure 2 to allow
the device to achieve an optical power
output of 40 W. (See figure 1 and table 1.)
This device uses the same package as the
20 W SLD431S array laser diode, allow-
ing user designs in which the laser device
can be easily replaced. (See figure 3.) The
buried current confinement structure was
used in the device structure when devel-
oping this device, and thus the device
supports use at low operating current
levels. Sony succeeded in achieving a
laser beam radiation angle (in the vertical
direction) narrower than those of ultrahigh
array laser diodes that have other struc-
tures by optimizing the laser structure. In
welders and other applications using this
product, this radiation angle means that
loss is less likely to occur when the laser
beam is focused at the YAG crystal, and
makes it possible to provide adequate mar-
gin in the optical design. Full consideration
was given to achieving the stability and
uniformity of quality and reliability so
strongly desired in industrial applications.
Support for Wavelength
Selection
While this device features the 808 ±3 nm
wavelength required for YAG excitation
as a general application, Sony can provide
other infrared wavelengths if desired.

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