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PDF SLD302XT Data sheet ( Hoja de datos )

Número de pieza SLD302XT
Descripción 200mW High Power Laser Diode
Fabricantes Sony Corporation 
Logotipo Sony Corporation Logotipo



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No Preview Available ! SLD302XT Hoja de datos, Descripción, Manual

200mW High Power Laser Diode
SLD302XT
Description
The SLD302XT allows independent thermal and electric design.
This laser diode has a built-in TE (Thermo Electric) cooler.
Features
High power
Recommended optical power output Po = 180mW
Low operating current
Flat Package with built-in photodiode, TE cooler and thermistor
Equivalent Circuit
TE Cooler
NP
TH LD
PD
12 34 56 78
Applications
Solid state laser excitation
Medical use
Structure
AlGaAs double-hetero-type laser diode
Operating Lifetime
MTTF 10,000H (effective value) at Po = 180mW, Tth = 25°C
Absolute Maximum Ratings (Tth = 25°C)
Optical power output
Po
Reverse voltage
VR LD
PD
Operating temperature
Topr
Storage temperature
Tstg
200
2
15
–10 to +50
–40 to +85
mW
V
V
°C
°C
Pin Configuration (Top View)
No. Function
1 TE cooler (negative)
2 Thermistor lead 1
3 Thermistor lead 2
4 Laser diode (anode)
5 Laser diode (cathode)
6 Photodiode (cathode)
7 Photodiode (anode)
8 TE cooler (positive)
Warranty
This warranty period shall be 90 days after receipt of the product or
1,000 hours operation time whichever is shorter.
Sony Quality Assurance Department shall analyze any product that
fails during said warranty period, and if the analysis results show
that the product failed due to material or manufacturing defects on
the part of Sony, the product shall be replaced free of charge.
Laser diodes naturally have differing lifetimes which follow a Weibull
distribution.
Special warranties are also available.
18
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E88062C02-PS

1 page




SLD302XT pdf
Power dependence of wavelength
Tth = 25°C
Po = 40mW
SLD302XT
Tth = 25°C
Po = 80mW
800 805 810 800 805 810
Wavelength [nm]
Wavelength [nm]
Tth = 25°C
Po = 120mW
Tth = 25°C
Po = 160mW
800 805 810 800 805 810
Wavelength [nm]
Wavelength [nm]
Tth = 25°C
Po = 200mW
800 805 810
Wavelength [nm]
–5–

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