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PDF SN7002W Data sheet ( Hoja de datos )
| Número de pieza | SN7002W | |
| Descripción | SIPMOS Small-Signal-Transistor | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SN7002W (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SIPMOS® Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
SN7002W
Product Summary
VDS 60 V
RDS(on) 5 Ω
ID 0.23 A
PG-SOT-323
Gate
pin1
Drain
pin 3
Source
pin 2
Type
SN7002W
SN7002W
Package
PG-SOT-323
PG-SOT-323
Pb-free
Yes
Yes
Tape and Reel Information
H6327: 3000 pcs/reel
H6433: 10000 pcs/reel
Marking
sSN
sSN
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
ID puls
TA=25°C
Reverse diode dv/dt
dv/dt
IS=0.23A, VDS=48V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
ESD class (JESD22-A114-HBM)
VGS
Power dissipation
TA=25°C
Operating and storage temperature
Ptot
Tj , Tstg
IEC climatic category; DIN IEC 68-1
Value
0.23
0.18
0.92
6
±20
0 (<250V)
0.5
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 2.5
Page 1
2011-07-13
1 page  
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C, VGS
0.6
A
0.4
0.3
10
7V
6V
5V
4.5V
4V
3.7V
3.5V
3.0V
0.2
0.1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.5
A
SN7002W
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: Tj = 25 °C, VGS
7.5
Ω
3.1V
3.5V
3.7V
6
4.1V
4.5V
5V
5.25 6V
7V
4.5 10V
3.75
3
2.25
1.5
0.75
0
0 0.1 0.2 0.3 0.4 0.5 A 0.7
ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0.3
S
0.2
0.3
0.15
0.2
0.1
0.1
0.05
0
0 0.5 1 1.5 2 2.5 3 3.5 V 4.5
VGS
0
0 0.1 0.2 0.3 0.4 A 0.6
ID
Rev. 2.5
Page 5
2011-07-13
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SN7002W.PDF ] | |
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