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PDF TLP372 Data sheet ( Hoja de datos )

Número de pieza TLP372
Descripción TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! TLP372 Hoja de datos, Descripción, Manual

TLP371,TLP372
TOSHIBA Photocoupler GaAs Ired & PhotoTransistor
TLP371, TLP372
Office Machine
Household Use Equipment
Telecommunication
Solid State Relay
Programmable Controllers
Unit in mm
The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide
infrared emitting diode optically coupled to a darlington connected
phototransistor which has an integrated baseemitter resistor to
optimize switching speed and elevated temperature characteristics in a
six lead plastic DIP package.
TLP372 is nobase internal connection for highEMI environments.
· Current transfer ratio: 1000% (min) (IF = 1mA)
· Isolation voltage: 5000 Vrms (min)
· UL recognized: UL1577, file no. E67349
TOSHIBA
Weight: 0.4g
117A8
Pin Configurations (top view)
TLP371
16
TLP372
1
2 52
3
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : Base
4
3
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : NC
6
5
4
1 2002-09-25

1 page




TLP372 pdf
IF – Ta
100
80
60
40
20
0
-20
0
20 40 60 80 100 120
Ambient temperature Ta ()
5000
3000
1000
500
300
IFP – DR
Pulse width
100µs
Ta = 25°C
100
50
30
10
3
10-3
3 10-2
3 10-1
3
100
Duty cycle ratio DR
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1
VF / Ta – IF
0.3 0.5 1
3
10
Forward current IF (mA)
30 50
TLP371,TLP372
PC – Ta
400
320
240
160
80
0
-20
0
20 40 60 80 100 120
Ambient temperature Ta ()
100
Ta = 25°C
50
30
IF – VF
10
5
3
1
0.5
0.3
0.1
0.6
0.8 1.0 1.2 1.4 1.6
Forward voltage VF (V)
1.8
1000
500
300
100
50
30
10
5
3
1
0.6
IFP – VFP
Pulse width 10µs
Repetitive frequency
=100Hz
Ta = 25°C
1.0 1.4 1.8 2.2 2.6
Pulse forward voltage VFP (V)
3.0
5 2002-09-25

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