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Número de pieza | TLE6280 | |
Descripción | 3-Phase Bridge Driver IC | |
Fabricantes | Infineon Technologies AG | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TLE6280 (archivo pdf) en la parte inferior de esta página. Total 24 Páginas | ||
No Preview Available ! Datasheet TLE6280GP
3-Phase Bridge Driver IC
Features
Product Summary
• Compatible to very low ohmic normal Turn on current
level input N-Channel Mosfets
• Separate input for each MOSFET
• PWM frequency up to 30kHz
• Fulfills specification down to 9V
supply voltage
Turn off current
Supply voltage range
Gate Voltage
Temperature range
• Low EMC sensitivity and emission
• Separate Source connection for each MOSFET
• Adjustable dead time
• Adjustable dI/dt limitation
• Short circuit protection with adjustable current limitation
• Driver undervoltage warning
• Reverse polarity protection
• Disable function
• Input with TTL characteristics
• Error flag
• Thermal overload warning for driver IC
• Shoot through protection
• Shoot through option
• Integrated bootstrap diodes
IOxx(on)
IOxx(off)
VVs
VGS
TJ
0.9
0.85
8...20
10
-40...+150
A
A
V
V
°C
P-DSO36-12
Ordering Code
Q67007-A9406
Application
• Dedicated for 3-phase high current motor bridges in PWM control mode. This device fulfills requirements in
12V automotive applications
General Description
3-phase bridge driver IC for MOSFET power stages with multiple protection functions.
VS
ILx
IHx
MFP
DT
ERR
Reverse Polarity
Protection
Block Diagram
CL CH VDH
Voltage Regulator
Charge Pump
BH1 GH1 SH1 BL1 GL1 SL1
HS Driver 1
LS Driver 1
Input Logic
- Shoot Through Protection
- Shoot Through Option
- Charge Pump Control
- Programmable Dead Time
HS Driver (Channel 2)
- Short Circuit Protection
- Undervoltage Detection
- DI/dt Control
Error Logic
- Short Circuit Shut Down
- Under Voltage Warning
- Over Temperature Warning
LS Driver (Channel 2)
- Short Circuit Protection
- Undervoltage Detection
- DI/dt Control
BH2
GH2
BL2
SH2
GL2
DIDT
GND
DI/dt Limitation
HS Driver 3
LS Driver 3
BH3 GH3 SH3 BL3 GL3 SL3
SL2
1 2004-03-31
1 page Datasheet TLE6280GP
RVS
from battery
CVS
VS
= Pin
Bold line = external component
Vreg1 13V
+13 ... +8V
CH
CCP
Triggered
by ILx
CL
Vreg3 =
Vreg1-8V
Vreg2=6V
BH
1
BH
2
BH
3
CBH1
Phase A
Phase B
Phase C
BL
1
BL
2
BL
3
CBL1
Fig. 2: Supply structure with external components (compare to Fig. 1)
rectly feed the low-side output stages and recharge the bootstrap capacitors connected to
GND.
As soon as the first of the 3 external low-side Mosfets is switched off, the CCP will be pulled
down to be re-charged.
This synchronous operation with the output stages has the benefit that the electromagnetic
emissions generated by the charge pump can be filtered by the same filter necessary to filter
the EME of the converter itself. At the same time it is assured that the high voltage at the CH
pin is available just in time to charge the high-side bootstrap.
! Timing of charge pump - Examples
Charge of bootstrap
1 capacitors
IL1
IL2
IL3
CH
1. ILx high
2
IL1
IL2
IL3
CH
1. ILx high
1. ILx low
1. ILx low
Charge of charge pump
capacitor
Charge of bootstrap capacitors
Charge of charge pump capacitor
Fig. 3: Trigger timing of charge pump caused by changing input signals
5
2004-03-31
5 Page Functional range
Parameter and Conditions
at Tj = -40 … +150 °C, unless otherwise specified
Supply voltage567
Operating temperature range
Duty Cycle @ 20kHz678 Vs>8V
Max. voltage range at Ixx, ERR
Max. voltage range at MFP, DT9
Max. voltage range at SLx2
Max. voltage range at SHx3
Max. voltage range at GLx2
Max. voltage range at GHx3
Max. voltage range at BHx3
Max. voltage range at VDH4
Max. voltage difference Bxx - Sxx
Max. voltage difference Gxx - Sxx
Max. voltage range at DIDT
PWM frequency10
Min. dead time resistor
Datasheet TLE6280GP
Symbol
VS
Tj
dc
VIxx; VERR
VMFP
VSLx
VSHx
VGLx
VGHx
VBHx
VVDH
VBxx-VSxx
VGxx-VSxx
VDIDT
FPWM
RDT
Values
Unit
8 ... 20
-40 ...+150
0...95
-0.3 ...+7
-0.3 ...+5
-7 ...+7
-7 ...+45
-7 ...+18
-7 ...+55
-0.3 ...+55
-4 ...+55
-0.3 ...+15
-0.3...+11
-7 ...+7
2...50
0
V
°C
%
V
V
V
V
V
V
V
V
V
V
V
kHz
kΩ
5 operation above 20V limited by max allowed power dissipation and max. ratings
6 If all 3 half-bridges are switched with fPWM and a duty cycle <10%, undervoltage shut down can occur below
Vs=9.5V
7 Total gate charge of the attached Mosfet < 250nC
8 If the bootstrap capacitor is charged to VBHx-VSHx=12V, the maximum duty cycle is 100% for 500 µs
9 VMFP up to 7V allowed up to 500ms
10 Limited only by the minimum bootstrap voltage (undervoltage logout of output stage) and the max allowed
power dissipation
11 2004-03-31
11 Page |
Páginas | Total 24 Páginas | |
PDF Descargar | [ Datasheet TLE6280.PDF ] |
Número de pieza | Descripción | Fabricantes |
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