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PDF TLE4921-5U Data sheet ( Hoja de datos )
| Número de pieza | TLE4921-5U | |
| Descripción | Dynamic Differential Hall Effect Sensor IC | |
| Fabricantes | Infineon Technologies AG | |
| Logotipo |  |
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Dynamic Differential Hall Effect Sensor IC
TLE4921-5U
Bipolar IC
Features
• Advanced performance
• High sensitivity
• Symmetrical thresholds
• High piezo resistivity
• Reduced power consumption
• South and north pole pre-induction possible
• AC coupled
• Digital output signal
• Two-wire and three-wire configuration possible
• Large temperature range
• Large airgap
• Low cut-off frequency
• Protection against overvoltage
• Protection against reversed polarity
• Output protection against electrical disturbances
P-SSO-4-1
Type
TLE4921-5U
Marking
21C5U
Ordering Code
Q62705-K664
Package
PSSO4-1
The differential Hall Effect sensor TLE 4921-5U provides a high sensitivity and a
superior stability over temperature and symmetrical thresholds in order to achieve a
stable duty cycle. TLE 4921-5U is particularly suitable for rotational speed detection
and timing applications of ferromagnetic toothed wheels such as anti-lock braking
systems, transmissions, crankshafts, etc. The integrated circuit (based on Hall
effect) provides a digital signal output with frequency proportional to the speed of
rotation. Unlike other rotational sensors differential Hall ICs are not influenced by
radial vibration within the effective airgap of the sensor and require no external
signal processing.
Data Sheet 1 2002-08-02
1 page  
TLE4921-5U
Absolute Maximum Ratings
Tj = – 40 to 150 °C
Parameter
Symbol Limit Values Unit Remarks
min. max.
Supply voltage
Output voltage
VS – 351) 30 V –
VQ – 0.7 30 V –
Output current
Output reverse current
Capacitor voltage
Junction temperature
Junction temperature
Junction temperature
Junction temperature
IQ
– IQ
VC
Tj
Tj
Tj
Tj
– 50 mA –
– 50 mA –
– 0.3 3
V–
– 150 °C 5000 h
– 160 °C 2500 h
– 170 °C 1000 h
–
210 °C
40 h
Storage temperature
Thermal resistance
P-SSO-4-1
TS
Rth JA
– 40 150 °C –
– 190 K/W –
Current through input- ISZ – 200 mA t < 2 ms; v = 0.1
protection device
Current through output- IQZ – 200 mA t < 2 ms; v = 0.1
protection device
Electro Magnetic Compatibility
ref. DIN 40839 part 1; test circuit 1
Testpulse 1
Testpulse 2
Testpulse 3a
Testpulse 3b
Testpulse 4
Testpulse 5
VLD
VLD
VLD
VLD
VLD
VLD
Level IV -100 V
Level IV 100 V
Level IV -150V
Level IV 100V
Level IV -7V
Level IV 86,5V
C
B
C
C
C
C
1) Reverse current < 10mA
Note: Stresses above those listed here may cause permanent damage to the
device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Data Sheet 5 2002-08-02
5 Page 
TLE4921-5U
Two-wire-application
1
4 C VS Q 2
CF
470 nF
GND
3
Line
RL
VS
VSIGNAL
RS
Sensor
for example : R L= 330 Ω
R S = 120 Ω
Mainframe
AES01263
Three-wire-application
1
4 C VS Q 2
CF
470 nF
GND
3
R p Line
4.7 nF
4.7 nF
VS
RL
VSIGNAL
for example : R L= 330 Ω
R P = 0 ... 330 Ω
Sensor
Figure 9 Application Circuits
Mainframe
AES01264
Data Sheet 11 2002-08-02
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet TLE4921-5U.PDF ] | |
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