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PDF TLE4261G Data sheet ( Hoja de datos )

Número de pieza TLE4261G
Descripción 5-V Low-Drop Voltage Regulator
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! TLE4261G Hoja de datos, Descripción, Manual

TLE 4261
5-V Low-Drop Voltage Regulator
TLE 4261
Bipolar IC
Features
q Very low-drop voltage
q Very low quiescent current
q Low starting-current consumption
q Proof against reverse polarity
q Input voltage up to 42 V
q Overvoltage protection up to 65 V (400 ms)
q Short-circuit proof
q External setting of reset delay
q Integrated watchdog circuit
q Wide temperature range
q Overtemperature protection
q Suitable for automotive use
q EMC proofed (100 V/m)
P-TO220-7-1
Type
w TLE 4261
w TLE 4261 S
w TLE 4261 G
Ordering Code
Q67000-A9003
Q67000-A9109
Q67000-A9059
Package
P-TO220-7-1
P-TO220-7-2
P-DSO-20-6 (SMD)
w Please also refer to the new pin compatible
device TLE 4271
P-TO220-7-2
P-DSO-20-6
Functional Description
TLE 4261 is a 5-V low-drop voltage regulator in a P-TO220-7 or in a P-DSO package.
The maximum input voltage is 42 V (65 V/400 ms). The device can produce an output
current of more than 500 mA. It is short-circuit proof and incorporates temperature
protection that disables the circuit at impermissibly high temperatures.
Semiconductor Group
1
1998-11-01

1 page




TLE4261G pdf
TLE 4261
Overvoltage
Monitoring
Temperature
Sensor
Saturation
Control and
Protection
Input 1
(18)
Adjustment
BANDGAP
Reference
Control
Amplifier
+
-
Buffer
7 Output
(12)
RESET
Generator
5 RESET
(9) Delay
3 RESET
(3) Output
Inhibit
(20) 2
Inhibit
Numbers in parentheses for TLE 4261 G
Block Diagram
(4-7)
(14-17) 4
GND
Watchdog
(11) 6
Watchdog
AEB00002
Semiconductor Group
5
1998-11-01

5 Page





TLE4261G arduino
TLE 4261
Input
6 V to 40 V
1
470 nF 2
6
TLE 4261
4
7
5 22 µF
100 nF
3
Output
100 k
RESET
4.7 k
From µC
AES00021
KL15 7 V to 18 V
Application Circuit
ΙΙ 1
7 Ι Q /Ι SC
1000 µF
470 nF
TLE 4261
VΙ + VR
Ι3 2
V2
VDr = VΙ -VQ
SVR
=
20
log
VR
VQ
VC
3 ΙR
54
Ι D Ι GND
CD
100 nF
6
VW
4.7 k
22 µF
VQ
VR
AES00135
Test Circuit
Semiconductor Group
11
1998-11-01

11 Page







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