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PDF TLE4261-2GL Data sheet ( Hoja de datos )

Número de pieza TLE4261-2GL
Descripción 5-V Low-Drop Voltage Regulator
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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No Preview Available ! TLE4261-2GL Hoja de datos, Descripción, Manual

5-V Low-Drop Voltage Regulator
TLE 4261-2
Features
• High accuracy 5 V ± 2%
• Very low-drop voltage
• Very low quiescent current
• Low starting-current consumption
• Proof against reverse polarity
• Input voltage up to 42 V
• Overvoltage protection up to 65 V (400 ms)
• Short-circuit-proof
• External setting of reset delay
• Integrated watchdog circuit
• Wide temperature range
• Overtemperature protection
• Suitable for automotive use
• EMC proofed (100 V/m)
P-TO220-7-1
Type
Ordering Code Package
w TLE 4261-2
Q67000-A9110 P-TO220-7-1
w TLE 4261-2 G Q67000-A9140 P-DSO-20-6
(SMD)
w TLE 4261-2 GL Q67006-A9193 P-TO220-7-8
(SMD)
w Please also refer to the new pin compatible device
TLE 4271
P-DSO-20-6
P-TO220-7-8
Functional Description
TLE 4261-2 is a high accuracy 5-V low-drop voltage regulator in a P-TO220-7 or in a P-
DSO package. The maximum input voltage is 42 V (65 V/400 ms). The device can
produce an output current of more than 500 mA. It is short-circuit-proof and incorporates
temperature protection that disables the circuit at impermissibly high temperatures.
Semiconductor Group
1
1998-11-01

1 page




TLE4261-2GL pdf
TLE 4261-2
Overvoltage
Monitoring
Temperature
Sensor
Saturation
Control and
Protection
Input 1
(18)
Adjustment
BANDGAP
Reference
Control
Amplifier
+
-
Buffer
7 Output
(12)
RESET
Generator
5 RESET
(9) Delay
3 RESET
(3) Output
Block Diagram
Inhibit
(20) 2
Inhibit
(4-7)
(14-17) 4
GND
Watchdog
(11) 6
Watchdog
AEB00002
Semiconductor Group
5
1998-11-01

5 Page





TLE4261-2GL arduino
TLE 4261-2
Input
6 V to 40 V
17
470 nF 2
5 22 µF
TLE 4261-2
100 nF
63
Output
100 k
RESET
From
Microcontroller
4
4.7 k
From µC
AES01455
KL15 7 V to 18 V
Application Circuit
ΙΙ 1
7 Ι Q /Ι SC
1000 µF
470 nF
TLE 4261-2
VΙ + VR
Ι3 2
V2
VDr = VΙ-VQ
SVR
=
20
log
VR
VQ
VC
3 ΙR
5
Ιd
CD
100 nF
4
Ι GND
6
VW
4.7 k
22 µF
VQ
VR
AES01508
Test Circuit
Semiconductor Group
11
1998-11-01

11 Page







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