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PDF TPCS8212 Data sheet ( Hoja de datos )
| Número de pieza | TPCS8212 | |
| Descripción | Silicon N Channel MOS Type (U-MOSIII) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TPCS8212
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8212
Lithium Ion Battery Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA)
• Common drain
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Single-device
Drain power
operation (Note 3a)
dissipation
(t = 10 s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
VDSS
VDGR
VGSS
ID
IDP
PD (1)
PD (2)
PD (1)
PD (2)
EAS
20 V
20 V
±12 V
6
A
24
1.1
JEDEC
JEITA
―
―
0.75
W
0.6
TOSHIBA
2-3R1E
Weight: 0.035 g (typ.)
Circuit Configuration
0.35
8765
46.8 mJ
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
IAR
EAR
6
0.075
A
mJ
Channel temperature
Storage temperature range
Tch 150 °C
Tstg
−55~150
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page.
1234
This transistor is an electrostatic sensitive device. Please handle with caution.
1 2002-01-17
1 page  
RDS (ON) – Ta
60
Common source
Pulse test
50
40 VGS = 2 V
30
20
VGS = 2.5 V
VGS = 4 V
10
0
−80
ID = 1.5, 3, 6 A
−40 0
40 80 120
Ambient temperature Ta (°C)
160
TPCS8212
10
10
5
3
5
IDR – VDS
10
VGS = −1 V
3
Common source
Ta = 25°C
Pulse test
1
0 0.2 0.4 0.6 0.8 1.0 1.2
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100
Common source
Ta = 25°C
VGS = 0 V
10 f = 1 MHz
0.1
1
Crss
10
Drain-source voltage VDS (V)
100
Vth – Ta
1.6
Common source
VDS = 10 V
ID = 200 µA
Pulse test
1.2
0.8
0.4
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
1.2
(1)
1
0.8 (2)
(3)
0.6
PD – Ta
Device mounted on a glass-epoxy board (a)
(Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b)
(Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
operation (Note 3b)
t = 10 s
0.4 (4)
0.2
0
0 50 100 150 200
Ambient temperature Ta (°C)
Dynamic input/output characteristics
20 10
Common source
16 VDS
ID = 6 A
Ta = 25°C
Pulse test
8
12 VDD = 16 V
6
VGS
84
42
00
0 8 16 24 32
Total gate charge Qg (nC)
5 2002-01-17
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TPCS8212.PDF ] | |
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