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PDF TN2510 Data sheet ( Hoja de datos )

Número de pieza TN2510
Descripción N-Channel Enhancement-Mode Vertical DMOS FETs
Fabricantes Supertex Inc 
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TN2510
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Applications
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
Package Options
TO-243AA (SOT-89)
Die*
TN2510
TN2510N8-G
-G indicates package is RoHS compliant (‘Green’).
* MIL visual screening available.
TN2510ND
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
BVDSS/BVDGS
(V)
100
RDS(ON)
(max)
(Ω)
1.5
ID(ON)
(min)
(A)
3.0
VGS(th)
(max)
(V)
2.0
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSS
BVDGS
±20V
Operating and storage temperature -55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
SOURCE
DRAIN
GATE
TO-243AA (SOT-89) (N8)
Product Marking
TN5AW
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com

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TN2510 pdf
3-Lead TO-243AA (SOT-89) Package Outline (N8)
TN2510
b b1
Symbol
A b b1 C D D1 E E1 e e1 H L
MIN 1.40 0.44 0.36 0.35
Dimensions
(mm)
NOM
-
-
-
-
MAX 1.60 0.56 0.48 0.44
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version D070908.
4.40
-
4.60
1.62
-
1.83
2.29
-
2.60
2.13
-
2.29
1.50
BSC
3.00
BSC
3.94
-
4.25
0.89
-
1.20
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.
©2008
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TN2510
A091408
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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