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PDF TPV8100 Data sheet ( Hoja de datos )

Número de pieza TPV8100
Descripción NPN SILICON RF POWER TRANSISTOR
Fabricantes Advanced Semiconductor　
Logotipo Advanced Semiconductor Logotipo



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No Preview Available ! TPV8100 Hoja de datos, Descripción, Manual

TTPPVV88110000B
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV8100 is Designed for
Transmitter Output Stages Covering
TV Band IV and V, Operating at 28 V.
FEATURES INCLUDE:
• Internal Input, Output Matching
• Common Emitter Configuration
• Gold Metalization
• Emitter Ballasting
MAXIMUM RATINGS
IC 12 A
VCER
PDISS
TJ
TSTG
θJC
40 V RBE = 10 Ω
215 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.8 OC/W
PACKAGE STYLE .438X.450 4LFL
1 = COLLECTOR #1 2 = COLLECTOR
#2
3 = BASE #1 4 = BASE #2
5 = EMITTER CASE (COMMON)
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCER
IC = 10 mA
RBE = 75 Ω
BVCBO
IC = 20 mA
BVEBO
IE = 10 mA
ICER
VCE = 28 V
RBE = 75 Ω
hFE VCE = 10 V IC = 2.0 A
Gp VCE = 28 V Icq = 2X50 mA
f = 860 MHz
η VCE = 28 V Icq = 2X50 mA
f = 860 MHz
Pout
VCE = 28 V Icq = 2X50 mA
1.0 dB COMPRESSION (ref = 25 W)
f = 860 MHz
FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL)
Pout VCE = 28 V Icq = 2X50 mA
Pout VCE = 32 V Icq = 2X25 mA
f = 860 MHz
f = 860 MHz
MINIMUM TYPICAL MAXIMUM
30
65
4.0
10
30 120
8.5
55
100
125
150
UNITS
V
V
V
mA
---
dB
%
W
W
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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