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PDF VBE60-06A Data sheet ( Hoja de datos )
| Número de pieza | VBE60-06A | |
| Descripción | Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
VBE 60-06A
Single Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
IdAV = 60 A
VRRM = 600 V
trr = 35 ns
VRSM
V
600
VRRM
V
600
Type
VBE 60-06A
+ miniBLOC, SOT-227 B
+
~
~~
–
~
–
Symbol
IFRMS
IdAV ①
IFSM
I2t
EAS
IAR
TVJ
TVJM
Tstg
Ptot
VISOL
Md
Weight
Conditions
rect., d = 0.5; TC = 90°C
TVJ = 45°C; VR = 0;
tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
50/60 Hz, RMS
IISOL ≤ 1 mA
mounting torque (M4)
terminal connection torque (M4)
typical
Maximum Ratings
70 A
60 A
250 A
315 A2s
0.2 mJ
0.1
-40...+150
150
-40...+150
140
2500
A
°C
°C
°C
W
V~
1.1-1.5/9-13
1.1-1.5/9-13
30
Nm/lb.in.
Nm/lb.in.
g
Symbol
Conditions
Characteristic max. Values
IR ②
VR = VRRM; TVJ = 25°C
VR = VRRM; TVJ = 125°C
VF ③
IF = 30 A;
TVJ = 125°C
TVJ = 25°C
RthJC
RthCH
trr IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V; TVJ = 25°C
IRM VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs
TVJ = 100°C
Pulse test: ① for resistive load at bridge output.
② Pulse Width = 5 ms, Duty Cycle < 2.0 %
③ Pulse Width = 300 µs, Duty Cycle < 2.0 %
0.15
1
1.26
1.54
1.15
typ. 0.1
typ. 35
typ. 5.5
mA
mA
V
V
K/W
K/W
ns
A
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2003 IXYS All rights reserved
Features
• International standard package miniBLOC
• Isolation voltage 2500 V~
• single Phase Rectifier Bridge with FREDs
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
Applications
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
1-2
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| PDF Descargar | [ Datasheet VBE60-06A.PDF ] | |
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