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PDF VND10B011Y Data sheet ( Hoja de datos )
| Número de pieza | VND10B011Y | |
| Descripción | DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY | |
| Fabricantes | STMicroelectronics | |
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VND10B
DOUBLE CHANNEL
HIGH SIDE SMART POWER SOLID STATE RELAY
TYPE
VND10B
VDSS
40 V
R DS( on)
0.1 Ω
In(*)
3.4 A
VC C
26 V
PRELIMINARY DATA
s OUTPUT CURRENT (CONTINUOUS):
14 A @ Tc=85oC PER CHANNEL
s 5V LOGIC LEVEL COMPATIBLE INPUT
s THERMAL SHUT-DOWN
s UNDER VOLTAGE PROTECTION
s OPEN DRAIN DIAGNOSTIC OUTPUT
s INDUCTIVE LOAD FAST DEMAGNETIZATION
s VERY LOW STAND-BY POWER DISSIPATION
HEPTAWATT
(vertical)
HEPTAWATT
(horizontal)
DESCRIPTION
The VND10B is a monolithic device made using
SGS-THOMSON Vertical Intelligent Power
Technology, intended for driving resistive or
inductive loads with one side grounded. This
device has two channels, and a common
diagnostic. Built-in thermal shut-down protects
the chip from over temperature and short circuit.
The status output provides an indication of open
load in on state, open load in off state,
overtemperature conditions and stuck-on to VCC.
HEPTAWATT
(in-line)
ORDER CODES:
HEPTAWATT vertical VND10B
HEPTAWATT horizontal VND10B (011Y)
HEPTAWATT in-line
VND10B (012Y)
BLOCK DIAGRAM
(*) In= Nominal current according to ISO definition for hi gh side automotive switch (see note 1)
September 1994
1/11
1 page  
Switching Time Waveforms
VND10B
FUNCTIONAL DESCRIPTION
The device has a common diagnostic output for
both channels which indicates open load in
on-state, open load in off-state, over temperature
conditions and stuck-on to VCC.
From the falling edge of the input signal, the
status output, initially low to signal a fault
condition (overtemperature or open load
on-state), will go back to a high state with a
different delay in case of overtemperature (tpovl)
and in case of open open load (tpol) respectively.
This feature allows to discriminate the nature of
the detected fault. To protect the device against
short circuit and over current condition, the
thermal protection turns the integrated Power
MOS off at a minimum junction temperature of
140 oC. When this temperature returns to 125 oC
the switch is automatically turned on again. In
short circuit the protection reacts with virtually no
delay, the sensor (one for each channel) being
located inside each of the two Power MOS areas.
This positioning allows the device to operate with
one channel in automatic thermal cycling and the
other one on a normal load. An internal function
of the devices ensures the fast demagnetization
of inductive loads with a typical voltage (Vdemag)
of -18V. This function allows to greatly reduces
the power dissipation according to the formula:
Pdem = 0.5 • Lload • (Iload)2 • [(VCC+Vdemag)/Vdemag] • f
where f = switching frequency and
Vdemag = demagnetization voltage.
The maximum inductance which causes the chip
temperature to reach the shut-down temperature
in a specified thermal environment is a function of
the load current for a fixed VCC, Vdemag and f
according to the above formula. In this device if
the GND pin is disconnected, with VCC not
exceeding 16V, both channel will switch off.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 2 (GND) and
ground, as shown in the typical application circuit
(fig. 2).
The consequences of the voltage drop across
this diode are as follows:
– If the input is pulled to power GND, a negative
voltage of -Vf is seen by the device. (Vil, Vih
thresholds and Vstat are increased by Vf with
respect to power GND).
– The undervoltage shutdown level is increa-
sed by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to the
device ground (see application circuit in fig. 3),
which becomes the common signal GND for the
whole control board avoiding shift of Vih, Vil and
Vstat. This solution allows the use of a standard
diode.
5/11
5 Page 
VND10B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
11/11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet VND10B011Y.PDF ] | |
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