|
|
PDF IRF6620 Data sheet ( Hoja de datos )
| Número de pieza | IRF6620 | |
| Descripción | HEXFETPower MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF6620 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with Existing Surface Mount
Techniques
PD - 95823A
IRF6620
HEXFET® Power MOSFET
VDSS RDS(on) max Qg(typ.)
20V 2.7mΩ@VGS = 10V 28nC
3.6mΩ@VGS = 4.5V
MX
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.8,9 for details)
SQ SX ST
MQ MX MT
Description
The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6620 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6620 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
buss converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6620 offers particularly low Rds(on) and high
Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
EAS
IAR
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
Power Dissipation
dSingle Pulse Avalanche Energy
ÃAvalanche Current
Linear Derating Factor
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
fjJunction-to-Ambient
gjJunction-to-Ambient
hjJunction-to-Ambient
ijJunction-to-Case
Junction-to-PCB Mounted
Max.
20
±20
150
27
22
220
2.8
1.8
89
39
22
0.017
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
V
A
W
mJ
A
W/°C
°C
Units
°C/W
Notes through are on page 2
www.irf.com
1
4/2/04
1 page  
12
ID = 27A
10
8
6
TJ = 125°C
4
2
0
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 12. On-Resistance Vs. Gate Voltage
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 13a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 13b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
www.irf.com
IRF6620
160
ID
TOP 7.2A
8.4A
120 BOTTOM 22A
80
40
0
25
50 75 100 125
Starting TJ, Junction Temperature (°C)
150
Fig 13c. Maximum Avalanche Energy Vs. Drain Current
VDS
LD
+
VDD -
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
D.U.T
Fig 14a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 14b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 16. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF6620.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF6620 | HEXFETPower MOSFET | International Rectifier |
| IRF6620PBF | Power MOSFET ( Transistor ) | International Rectifier |
| IRF6620TRPBF | Power MOSFET ( Transistor ) | International Rectifier |
| IRF6621 | combines the latest HEXFET Power MOSFET Silicon technology | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |