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PDF SI6463BDQ Data sheet ( Hoja de datos )
| Número de pieza | SI6463BDQ | |
| Descripción | P-Channel 1.8-V (G-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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New Product
P-Channel 1.8-V (G-S) MOSFET
Si6463BDQ
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.015 @ VGS = -4.5 V
-20 0.020 @ VGS = -2.5 V
0.027 @ VGS = -1.8 V
ID (A)
-7.4
- 6.3
- 5.5
S*
TSSOP-8
D 1D
S2
Si6463BDQ
S3
G4
Top View
8D
7S
6S
5D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
- 7.4
-5.9
-1.35
1.5
1.0
-20
"8
-30
-55 to 150
-6.2
4.9
-0.95
1.05
0.67
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72018
S-21782—Rev. A, 07-Oct-02
Symbol
RthJA
RthJF
Typical
65
100
46
Maximum
83
120
56
Unit
_C/W
www.vishay.com
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New Product
Si6463BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Single Pulse
10- 3
10- 2
10- 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72018
S-21782—Rev. A, 07-Oct-02
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI6463BDQ.PDF ] | |
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