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PDF SI5515DC Data sheet ( Hoja de datos )
| Número de pieza | SI5515DC | |
| Descripción | Complementary 20-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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Si5515DC
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
VDS (V)
20
P-Channel
−20
rDS(on) (W)
0.040 @ VGS = 4.5 V
0.045 @ VGS = 2.5 V
0.052 @ VGS = 1.8 V
0.086 @ VGS = −4.5 V
0.121 @ VGS = −2.5 V
0.171 @ VGS = −1.8 V
1206-8 ChipFETr
ID (A)
5.9
5.6
5.2
−4.1
−3.4
−2.9
FEATURES
D TrenchFETr Power MOSFETS
D Ultra Low rDS(on) and Excellent Power
Handling In Compact Footprint
APPLICATIONS
D Load Switching for Portable Devices
D1 S2
1
S1
D1 G1
D1 S2
D2 G2
D2
Bottom View
G1
Marking Code
EC XXX
Lot Traceability
and Date Code
Part # Code
S1
N-Channel MOSFET
Ordering Information: Si5515DC-T1—E3
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 25_C
TA = 85_C
Maximum Power Dissipationa
TA = 25_C
TA = 85_C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
5 secs
5.9
4.2
1.8
2.1
1.1
Steady State 5 secs
20
"8
4.4 −4.1
3.1 −2.9
20
0.9 −1.8
1.1 2.1
0.6 1.1
−55 to 150
260
Steady State
−20
−3
−2.2
−15
−0.9
1.1
0.6
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
RthJA
RthJF
50
90
30
60
110 _C/W
40
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72221
S-41167—Rev. B, 14-Jun-04
www.vishay.com
1
1 page  
Si5515DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2 Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
N−CHANNEL
0.2
0.1
0.1 0.05
0.02
0.01
10−4
Single Pulse
10−3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
90_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100 600
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
15
VGS = 5 thru 3 V
15
12
2.5 V
12
99
2V
66
1 10
P-CHANNEL
Transfer Characteristics
TC = −55_C
25_C
125_C
3 1.5 V
1V
0
012345
VDS − Drain-to-Source Voltage (V)
Document Number: 72221
S-41167—Rev. B, 14-Jun-04
3
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS − Gate-to-Source Voltage (V)
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