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Número de pieza | SI4828DY | |
Descripción | Dual N-Channel 30-V (D-S) MOSFET | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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Si4828DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1
Channel-2
VDS (V)
30
rDS(on) (W)
0.022 @ VGS = 10 V
0.030 @ VGS = 4.5 V
0.0135 @ VGS = 10 V
0.0175 @ VGS = 4.5 V
ID (A)
7.5
6.5
9.8
8.5
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
D1 D1
D2 D2
G1
S1
N-Channel 1
MOSFET
G2
S2
N-Channel 2
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1
Channel-2
Parameter
Symbol 10 secs Steady State 10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
7.5
6
1.8
2
1.78
30
"20
5.8 9.8
4.6 7.8
30
1.06
1.8
1.17
2
0.75
1.28
–55 to 150
7.5
6
40
1.06
1.17
0.75
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
t v 10 sec
Steady-State
RthJA
Maximum Junction-to-Foot (Drain)
Steady-State
RthJC
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71181
S-00983—Rev. A, 15-May-00
Channel-1
Typ Max
55 62.5
89 107
36 45
Channel-2
Typ Max
53 62.5
89 107
34 42
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
1
1 page New Product
Si4828DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
CHANNELĆ1
0.01
10–4
Single Pulse
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
VGS = 10 thru 4 V
32
50
40
1 10
CHANNELĆ2
Transfer Characteristics
24 30
TC = 125_C
16 20
8
0
0
0.020
0.016
0.012
2V 3V
2468
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
VGS = 4.5 V
VGS = 10 V
0.008
0.004
0
0 8 16 24 32
ID – Drain Current (A)
Document Number: 71181
S-00983—Rev. A, 15-May-00
40
10 25_C
–55_C
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS – Gate-to-Source Voltage (V)
4200
Capacitance
3500
Ciss
2800
2100
1400
700
Coss
Crss
0
0 6 12 18 24 30
VDS – Drain-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SI4828DY.PDF ] |
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SI4828DY | Dual N-Channel 30-V (D-S) MOSFET | Vishay Siliconix |
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