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PDF Si4812DY-E3 Data sheet ( Hoja de datos )
| Número de pieza | Si4812DY-E3 | |
| Descripción | N-Channel 30-V (D-S) MOSFET with Schottky Diode | |
| Fabricantes | Vishay Siliconix | |
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Si4812DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.018 @ VGS = 10 V
0.028 @ VGS = 4.5 V
ID (A)
9
7.3
FEATURES
D LITTLE FOOTr Plus Power MOSFET
D 100% Rg Tested
SCHOTTKY PRODUCT SUMMARY
VDS (V)
30
VSD (V)
Diode Forward Voltage
0.50 V @ 1.0 A
SO-8
IF (A)
1.4
D
S1
S2
S3
G4
Top View
8D
7D
6D
5D
Ordering Information:
Si4812DY
Si4812DY-T1 (with Tape and Reel)
Si4812DY—E3 (Lead (Pb)-Free)
Si4812DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
G
N-Channel MOSFET
S
Schottky Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Limit
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150_C) (MOSFET)a, b
Pulsed Drain Current (MOSFET)
TA = 25_C
TA = 70_C
Continuous Source Current (MOSFET Diode Conduction)a, b
Average Foward Current (Schottky)
Pulsed Foward Current (Schottky)
Maximum Power Dissipation (MOSFET)a, b
Maximum Power Dissipation (Schottky)a, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
Symbol
VDS
VGS
ID
IDM
IS
IF
IFM
PD
TJ, Tstg
10 sec
Steady State
30
30
"20
9 6.9
7.5 5.6
50
2.1 1.2
1.4 0.8
30
2.5 1.4
1.6 0.9
2.0 1.2
1.3 0.8
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Maximum Junction-to-Ambient (t v 10 sec)a
Maximum Junction-to-Ambient (t = steady state)a
MOSFET
Schottky
MOSFET
Schottky
RthJA
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
Typical
40
50
72
85
Maximum
50
60
90
100
Unit
_C/W
www.vishay.com
1
1 page  
Si4812DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
85_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
1 10
30
Document Number: 71775
S-41426—Rev. G, 26-Jul-04
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet Si4812DY-E3.PDF ] | |
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