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PDF SI4807DY Data sheet ( Hoja de datos )
| Número de pieza | SI4807DY | |
| Descripción | P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si4807DY
Vishay Siliconix
P-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
Gate 1
Gate 2
–30
rDS(ON) (W)
0.035 @ VGS = –10 V
0.054 @ VGS = –4.5 V
1.3 @ VGS = –10 V
2.2 @ VGS = –4.5 V
ID (A)
"6
"4.8
"0.9
"0.7
D
G2 1
G1 2
S3
S4
SO-8
Top View
8 NC
7D
6D
5D
G2
G1
S
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Gate 1
Gate 2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–30
"20
"6 "0.9
"4.8
"0.7
"30
"1.5
–1.25
2.3
1.0
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambienta
Parameter
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
Symbol
RthJA
Limit
55
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1
1 page  
Si4807DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (VG1 = 0 V, 25_C UNLESS NOTED)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
10
Output Characteristics
VG2S = 10 V
3, 2, 1 V
9V
8V
7V
6V
5V
4V
2468
VDS – Drain-to-Source Voltage (V)
Gate Charge
10
On-Resistance vs. Drain Current
10
8
6
4
VG2S = 4.5 V
2
VG2S = 10 V
0
0 0.2 0.4 0.6 0.8 1.0
ID – Drain Current (A)
On-Resistance vs. Gate-to-Source Voltage
10
8
VDS = 15 V
ID = 150 mA
6
8
6
44
ID = 150 mA
22
0
0 0.4 0.8 1.2 1.6 2.0
Qg – Total Gate Charge (nC)
0
0 2 4 6 8 10
VG2S – Gate-to-Source Voltage (V)
Document Number: 70643
S-00652—Rev. E, 27-Mar-00
www.vishay.com S FaxBack 408-970-5600
2-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI4807DY.PDF ] | |
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