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PDF Si4565DY Data sheet ( Hoja de datos )
| Número de pieza | Si4565DY | |
| Descripción | N- and P-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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New Product
Si4565DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
N-Channel
P-Channel
VDS (V)
40
−40
rDS(on) (W)
0.040 @ VGS = 10 V
0.045 @ VGS = 4.5 V
0.054 @ VGS = −10 V
0.072 @ VGS = −4.5 V
ID (A)
5.2
4.9
−4.5
−3.9
Qg (Typ)
8
9
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
D UIS Tested
APPLICATIONS
D CCFL Inverter
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
Ordering Information: Si4565DY—E3
Si4565DY-T1—E3 (with Tape and Reel)
D1 S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipatioa
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
10 secs Steady State 10 secs Steady State
40 −40
"12
5.2 3.9
−4.5
"16
−3.3
4.2
3.1
−3.6
−2.7
30
1.7
0.9
−1.7
−0.9
13 16
8.5 13
2.0 1.1 2 1.1
1.3 0.7 1.3 0.7
−55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73224
S-50033—Rev. A, 17-Jan-05
Symbol
RthJA
RthJF
N-Channel
Typ
52
90
32
Max
62.5
110
40
P-Channel
Typ
50
85
30
Max
62.5
110
40
Unit
_C/W
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New Product
Si4565DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
N-CHANNEL
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10−4
10−3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA =
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
90_C/W
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
Normalized Thermal Transient Impedance, Junction-to-Foot
100 600
0.2
0.1
0.1 0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 10 thru 4 V
16
20
16
12 12
3V
88
1 10
P-CHANNEL
Transfer Characteristics
TC = −55_C
25_C
125_C
44
0
01234
VDS − Drain-to-Source Voltage (V)
Document Number: 73224
S-50033—Rev. A, 17-Jan-05
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS − Gate-to-Source Voltage (V)
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet Si4565DY.PDF ] | |
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