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PDF SI4562DY Data sheet ( Hoja de datos )
| Número de pieza | SI4562DY | |
| Descripción | N- and P-Channel 2.5-V (G-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si4562DY
Vishay Siliconix
N- and P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
20
0.025 at VGS = 4.5 V
0.035 at VGS = 2.5 V
P-Channel
- 20
0.033 at VGS = - 4.5 V
0.050 at VGS = - 2.5 V
ID (A)
7.1
6.0
- 6.2
- 5.0
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 2.5 Rated
• Compliant to RoHS directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4562DY-T1-E3 (Lead (Pb)-free)
Si4562DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G1
S2
G2
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
20 - 20
± 12
7.1 - 6.2
5.7 - 4.9
40 - 40
1.7 - 1.7
2.0
1.3
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
RthJA
N- or P-Channel
62.5
Unit
V
A
W
°C
Unit
°C/W
Document Number: 70717
S09-0867-Rev. C, 18-May-09
www.vishay.com
1
1 page  
Si4562DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
VGS = 5 V, 4.5 V, 4 V, 3.5 V
40
32 3 V 32
24 24
2.5 V
TC = - 55 °C
25 °C
125 °C
16
8
0
0
0.10
2V
1.5 V
1234
VDS - Drain-to-Source Voltage (V)
Output Characteristics
5
16
8
0
0
4500
123
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
4
0.08
3600
Ciss
0.06
VGS = 2.5 V
0.04
0.02
VGS = 4.5 V
2700
1800
900
Coss
Crss
0.00
0
5
8 16 24 32
ID - Drain Current (A)
On-Resistance vs. Drain Current
VDS = 10 V
4 ID = 6.2 A
3
40
0
0
1.6
4 8 12 16
VDS - Drain-to-Source Voltage (V)
Capacitance
VGS = 4.5 V
1.4 ID = 6.2 A
1.2
20
2 1.0
1 0.8
0
0 5 10 15 20 25
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70717
S09-0867-Rev. C, 18-May-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4562DY.PDF ] | |
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