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PDF SI4559EY Data sheet ( Hoja de datos )
| Número de pieza | SI4559EY | |
| Descripción | N- and P-Channel 60-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Si4559EY
Vishay Siliconix
N- and P-Channel 60-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
60
0.055 at VGS = 10 V
0.075 at VGS = 4.5 V
P-Channel
- 60
0.120 at VGS = - 10 V
0.150 at VGS = - 4.5 V
ID (A)
± 4.5
± 3.9
± 3.1
± 2.8
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4559EY-T1-E3 (Lead (Pb)-free)
Si4559EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 60 - 60
Gate-Source Voltage
VGS ± 20 ± 20
Continuous Drain Current (TJ = 175 °C)a
TA = 25 °C
TA = 70 °C
ID
± 4.5
± 3.8
± 3.1
± 2.6
Pulsed Drain Current
IDM
± 30
± 30
Continuous Source Current (Diode Conduction)a
IS 2.0 - 2.0
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.4
1.7
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
RthJA
N- or P-Channel
62.5
Unit
°C/W
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
www.vishay.com
1
1 page  
Si4559EY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
VGS = 10 V, 9 V, 8 V, 7 V, 6 V
24
5V
20
16
18 12
TC = - 55 °C
- 150 °C
25 °C
12
6
0
0
1.0
4V
3V
12345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
0.8
0.6
0.4
VGS = 4.5 V
0.2 VGS = 10 V
0
0 4 8 12 16 20
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 3.1 A
8
6
VDS = 30 V
8
4
0
0246
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1400
1200
1000
Ciss
800
600
400
Coss
200
Crss
0
0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
ID = 3.1 A
1.6
1.2
VGS = 10 V
8
60
4 0.8
2 0.4
0
0 4 8 12 16 20
Qg - Total Gate Charge (nC)
Gate Charge
0
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SI4559EY.PDF ] | |
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