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Número de pieza | SI4501DY | |
Descripción | Complementary MOSFET Half-Bridge (N- and P-Channel) | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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Si4501DY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel
30
P-Channel
-8
rDS(on) (W)
0.018 @ VGS = 10 V
0.027 @ VGS = 4.5 V
0.042 @ VGS = - 4.5 V
0.060 @ VGS = - 2.5 V
ID (A)
"9
"7.4
"6.2
"5.2
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8D
7D
6D
5D
S2
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
"9
"7.4
"30
1.7
2.5
1.6
- 55 to 150
-8
"8
"6.2
"5.0
"20
- 1.7
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 70934
S-61812—Rev. B, 19-Jul-99
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJC
N-Channel
Typ Max
38 50
73 95
17 22
P- Channel
Typ Max
40 50
73 95
20 26
Unit
_C/W
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Si4501DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
NCHANNEL
0.01
10 - 4
0.02
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
2.5 V
16
VGS = 5 thru 3 V
20
16
12 2 V 12
1.8 V
88
1 10
PCHANNEL
Transfer Characteristics
TC = - 55_C
25_C
125_C
4
0
0
0.20
0.16
1.5 V
1V
123
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 1.8 V
4
4
0
0.0
2500
2000
0.5 1.0 1.5 2.0 2.5
VGS - Gate-to-Source Voltage (V)
Capacitance
Ciss
3.0
0.12
1500
0.08
0.04
VGS = 2.5 V
VGS = 4.5 V
0.00
0
4 8 12 16
ID - Drain Current (A)
Document Number: 70934
S-61812—Rev. B, 19-Jul-99
20
1000
Coss
500
Crss
0
0246
VDS - Drain-to-Source Voltage (V)
8
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5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SI4501DY.PDF ] |
Número de pieza | Descripción | Fabricantes |
SI4501DY | Complementary MOSFET Half-Bridge (N- and P-Channel) | Vishay Siliconix |
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