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PDF SI4500BDY-E3 Data sheet ( Hoja de datos )
| Número de pieza | SI4500BDY-E3 | |
| Descripción | Complementary MOSFET Half-Bridge (N- and P-Channel) | |
| Fabricantes | Vishay Siliconix | |
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Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
−20
rDS(on) (W)
0.020 @ VGS = 4.5 V
0.030 @ VGS = 2.5 V
0.060 @ VGS = −4.5 V
0.100 @ VGS = −2.5 V
ID (A)
9.1
7.5
−5.3
−4.1
FEATURES
D TrenchFETr Power MOSFET
S1 1
G1 2
S2 3
G2 4
SO-8
8D
7D
6D
5D
G2
Top View
Ordering Information:
Si4500BDY
Si4500BDY-T1 (with Tape and Reel)
Si4500BDY—E3 (Lead (Pb)-Free)
Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
G1
S2
D
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
10 sec.
9.1
7.3
2.1
2.5
1.6
Steady State 10 sec.
20
"12
6.6
−5.3
5.3 −4.9
30
1.1 −2.1
1.3 2.5
0.8 1.6
−55 to 150
Steady State
−20
"12
−3.8
−3.1
−20
−1.1
1.3
0.8
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
t v 10 sec
Steady-State
Steady-State
Symbol
RthJA
RthJF
N-Channel
Typ
40
75
20
Max
50
95
22
P- Channel
Typ
41
75
23
Max
50
95
26
Unit
_C/W
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1
1 page  
Si4500BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
N−CHANNEL
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
2
1
Duty Cycle = 0.5
Notes:
PDM
t1
1.
2.
t2
Duty Cycle, D
Per Unit Base
=
=
t1
RthtJ2A
=
75_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
Normalized Thermal Transient Impedance, Junction-to-Foot
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 3.5 V
3V
16
20
16
P-CHANNEL
Transfer Characteristics
TC = −55_C
25_C
12
2.5 V
8
2V
4
1.5 V
0
012345
VDS − Drain-to-Source Voltage (V)
Document Number: 72281
S-41428—Rev. B, 26-Jul-04
12 125_C
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS − Gate-to-Source Voltage (V)
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| PDF Descargar | [ Datasheet SI4500BDY-E3.PDF ] | |
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