(PDF) SI4465DY Datasheet - P-Channel 1.8-V (G-S) MOSFET

Número de pieza	SI4465DY
Descripción	P-Channel 1.8-V (G-S) MOSFET
Fabricantes	Vishay Siliconix
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No Preview Available ! P-Channel 1.8-V (G-S) MOSFET Si4465DY Vishay Siliconix PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.009 @ VGS = - 4.5 V - 8 0.011 @ VGS = - 2.5 V 0.016 @ VGS = - 1.8 V ID (A) - 14 - 12 - 10 S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4465DY Si4465DY-T1 (with Tape and Reel) SSS G DDDD P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS VGS -8 "8 Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID IDM IS PD TJ, Tstg - 14 - 11 - 40 - 2.1 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board. b. t v10 sec. Document Number: 70830 S-31989—Rev. B, 13-Oct-03 t v 10 sec Steady State Symbol RthJA Typical 80 Maximum 50 Unit _C/W www.vishay.com 1 1 page

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PDF SI4465DY Data sheet ( Hoja de datos )