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PDF SI4410BDY Data sheet ( Hoja de datos )
| Número de pieza | SI4410BDY | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay Siliconix | |
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N-Channel 30-V (D-S) MOSFET
Si4410BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0135 @ VGS = 10 V
0.020 @ VGS = 4.5 V
ID (A)
10
8
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4410BDY
Si4410BDY-T1 (with Tape and Reel)
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATIONS
D Battery Switch
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
10 7.5
86
50
2.3 1.26
2.5 1.4
1.6 0.9
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72211
S-31990—Rev. B, 13-Oct-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
40
70
25
Maximum
50
90
30
Unit
_C/W
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Si4410BDY
Vishay Siliconix
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
0.01
10 - 4
Single Pulse
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72211
S-31990—Rev. B, 13-Oct-03
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI4410BDY.PDF ] | |
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