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PDF SI4392DY-T1 Data sheet ( Hoja de datos )
| Número de pieza | SI4392DY-T1 | |
| Descripción | N-Channel Reduced Qg/ Fast Switching WFET | |
| Fabricantes | Vishay Siliconix | |
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Si4392DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching WFETt
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.00975 @ VGS = 10 V
0.01375 @ VGS = 4.5 V
ID (A)
12.5
10.0
FEATURES
D Extremely Low Qgd WFET Technology for
Switching Losses
D TrenchFETr Power MOSFET
D 100% Rg Tested
APPLICATIONS
D High-Side DC/DC Conversion
− Notebook
− Server
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
D
G
Ordering Information:
Si4392DY
Si4392DY-T1 (with Tape and Reel)
Si4392DY—E3 (Lead (Pb)-Free)
Si4392DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)a
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"20
12.5
10
50
2.7
3.0
1.9
−55 to 150
Unit
A
W
THERMAL RESISTANCE RATINGSa
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board, t v 10 sec
Document Number: 72151
S-41427—Rev. D, 26-Jul-04
RthJA
RthJF
Typical
33
16
Maximum
42
20
Unit
_C/W
www.vishay.com
1
1 page  
Si4392DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10−4
Single Pulse
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Document Number: 72151
S-41427—Rev. D, 26-Jul-04
www.vishay.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SI4392DY-T1.PDF ] | |
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